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    KMM366S403CTL Search Results

    KMM366S403CTL Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM366S403CTL Samsung Electronics PC66 SDRAM MODULE Original PDF
    KMM366S403CTL-G0 Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM366S403CTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48S2020CT-G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G

    KM48S2020CT G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 KM48S2020CT KM48S2020CT G10 KMM366S403CTL-G0

    KMM366S403CTL-GO

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403CTL KMM366S403CTL 400mil 168-pin 000DIA KM48S2020CT KMM366S403CTL-GO

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.


    OCR Scan     		PDF KMM366S403CTL 200mV. 4Mx64 KMM366S403CTL 150Max KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.


    OCR Scan     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 150Max KM48S2020CT