Untitled
Abstract: No abstract text available
Text: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM48S8020B
PC100
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RA12
Abstract: No abstract text available
Text: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM48S8020B
PC100
RA12
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KM48S8020
Abstract: KMM366S1603BTL-G0
Text: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S1603BTL
200mV.
66MHz
KM48S8020
KMM366S1603BTL-G0
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KMM374S1603BTL-G0
Abstract: KM48S8020
Text: KMM374S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S1603BTL
200mV.
66MHz
KMM374S1603BTL-G0
KM48S8020
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schematic circuit adsl router part list
Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Text: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol
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KS32C5000
/KS32C50100
32-bit
Print3ff3024
0x1a048060
0x3ff3028
0x1c04a060
0x3ff302c
0x04000380
0x3ff3030
schematic circuit adsl router part list
29e010
78R05
KS32C50100
SNDS100
78R33
MAX232 CPE
29e010 datasheet
c-mac stp
samsung ribbon
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Untitled
Abstract: No abstract text available
Text: KMM374S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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KMM374S803BTL
200mV.
66MHz
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Untitled
Abstract: No abstract text available
Text: KMM366S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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KMM366S803BTL
200mV.
66MHz
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5.6V
Abstract: km-48 S8020
Text: KM48S8020B CMOS SDRAM 4M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs CAS latency 2 & 3
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KM48S8020B
KM48S8020B
10/AP
5.6V
km-48
S8020
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Untitled
Abstract: No abstract text available
Text: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC param eter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM48S8020B
PC100
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KM48S8020
Abstract: a9333
Text: KM48S8020A CMOS SDRAM 4M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply •■ LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs - CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)
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KM48S8020A
KM48S8020A
7TL4142
KM48S8020
a9333
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54PIN
Abstract: RA12
Text: Preliminary CMOS SDRAM KM48S8020B Revision History Revision ,3 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. 1 ELECTRONICS This Material Copyrighted By Its Respective Manufacturer
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KM48S8020B
A10/AP
54PIN
RA12
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Untitled
Abstract: No abstract text available
Text: KM48S8020B Preliminary CMOS SDRAM Revision History Revision ,3 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 3 Nov. '97 ELECTRONICS
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KM48S8020B
48S8020B
10/AP
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KM48S8030AT
Abstract: REF04 KM48S8020AT
Text: KM48S8020AT SDRAM ELECTRONICS 4M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM48S8020AT
KM48S8020A/KM48S8021A
KM48S8020AT)
KM48S8030AT
REF04
KM48S8020AT
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KMM374S803AT-G2
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KM M374S803AT KMM374S803AT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S803AT is a 8M bit x 72 Synchronous - Performance range
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KMM374S803AT
M374S803AT
8Mx72
400mil
168-pin
KMM374S803AT-G8
KMM374S803AT-G0
KMM374S803AT-G2
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM466S803AT KMM466S803AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S803AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM466S803AT
KMM466S803AT
8Mx64
400mil
144-pin
QQ37bS7
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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3342B
Abstract: No abstract text available
Text: KM4 8 S 8 0 2 1 AT ELECTRONICS SDRAM 4M x 8Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM48S8020A/KM48S8021A
48S8021A
4Ji42
DD3342A
3342B
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Untitled
Abstract: No abstract text available
Text: KMM366S1603BTL PC66 SDRAM MODULE KMM366S1603BTL SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1603BTL is a 16M bit x 64 Synchro nous Dynamic RAM high density memory module. The Samsung
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KMM366S1603BTL
KMM366S1603BTL
16Mx64
400mil
168-pin
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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Untitled
Abstract: No abstract text available
Text: KMM374S803BTL PC66 SDRAM MODULE KMM374S803BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S803BTL is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM374S803BTL
KMM374S803BTL
8Mx72
400mil
168-pin
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KMM366S803AT-G2
Abstract: 30H22
Text: NEW JEDEC SDRAM MODULE KMM366S803AT KMM366S803AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S803AT is a 8M bit x 64 Synchronous - Performance range Max Freq. Speed
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KMM366S803AT
KMM366S803AT
8Mx64
400mil
168-pin
KMM366S803AT-G8
KMM366S803AT-G0
KMM366S803AT-G2
30H22
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Untitled
Abstract: No abstract text available
Text: KMM366S803BTL PC66 SDRAM MODULE KMM366S803BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S803BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM366S803BTL
KMM366S803BTL
8Mx64
400mil
168-pin
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