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    S9012LT1 Search Results

    S9012LT1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    S9012LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),SOT-23 Original PDF
    S9012LT1 Weitron PNP General Purpose Transistors Original PDF
    S9012LT1 Unknown SOT-23 Plastic-Encapsulate Transistors Scan PDF

    S9012LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2t1 SOT-23

    Abstract: S9012LT1
    Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -25 -40 -5 -500 300 2.4 417 S9012LT1=2T1 -25 -0.1 -40 -100 -5.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9012LT1 OT-23 S9012LT1 -20Vdc, -50mAdc) -150uA -100uA -50uA 2t1 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9012LT1 S9013LT1 OT-23 -500mA 225mW -50mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 S9012LT1 -50mA -500mA -20mA 30MHz S9012LT1

    2T1 SOT-23

    Abstract: S9012LT1 sot23 marking a2
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A


    Original     		PDF OT-23 OT--23 S9012LT1 -100A -20mA 037TPY 950TPY 550REF 022REF 2T1 SOT-23 S9012LT1 sot23 marking a2

    s9013

    Abstract: S9013LT1
    Text: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9013LT1 OT-23 S9012LT1 500mA 225Mw 500mA 062in 300uS s9013 S9013LT1

    Untitled

    Abstract: No abstract text available
    Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15


    Original     		PDF S9012LT1 OT-23 S9012PLT1 S9012QLT1 S9012RLT1 S9012SLT1 28-Apr-2011 -50mAdc)

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    2T1 SOT-23

    Abstract: AV9012LT1 S9012LT1 AV9012
    Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 AV9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 AV9012LT1 -50mA -500mA -20mA 30MHz S9012LT1 2T1 SOT-23 AV9012LT1 AV9012

    2t1 SOT-23

    Abstract: S9012LT1
    Text: SOT-23 P lastic-E n cap su late Transistors 1 .BASE 2 .EMITTER 3.COLLECTOR S9012LT1 TRANSISTO R PNP Power dissipation Pcm : 0 .3 W (Tamb=25°C) Collector current ICM : -0.5 A « Collector-base voltage V ( b r )c b o : -4 0 V Operating and storage junction temperature range


    OCR Scan     		PDF OT-23 S9012LT1 -100u 2t1 SOT-23

    LB-50

    Abstract: lb50
    Text: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ 1 .B A S E S 9012LT1 TR A N SISTO R PNP 2 .EMITTER 3 .C O L L E C T O R FEATURES '¿h Kb Power dissipation Pcm : 0.3 W ( Tamb=25"C ) . 2.4 . Collector current 13 « |CM : -0.5 A Collector-base voltage


    OCR Scan     		PDF OT-23 9012LT1 S9012LT1 S9012LT1 LB-50 lb50