S9013LT1
Abstract: No abstract text available
Text: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
|
Original
|
S9013LT1
OT-23
S9013LT1
13-May-05
50mAdc)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
|
Original
|
S9012LT1
S9013LT1
OT-23
-500mA
225mW
-50mA
-500mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics
|
Original
|
S9013LT1
OT-23
S9013LT1
50mAdc)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
|
Original
|
S9013LT1
OT-23
S9013LT1
13-May-05
50mAdc)
SMAL20uA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 VCEO S9013PLT1=13P S9013QLT1=13Q Value 20 40 5.0 500 S9013RLT1=13R 0.1 S9013SLT1=13S 20 40 100 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 28-Apr-2011 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
|
Original
|
S9013LT1
OT-23
S9013PLT1
S9013QLT1
S9013RLT1
S9013SLT1
28-Apr-2011
50mAdc)
OT-23
|
PDF
|
s9013
Abstract: S9013LT1
Text: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃
|
Original
|
S9013LT1
OT-23
S9012LT1
500mA
225Mw
500mA
062in
300uS
s9013
S9013LT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation
|
Original
|
OT-23
S9013LT1
037TPY
950TPY
550REF
022REF
|
PDF
|
S9013LT1
Abstract: MARKING E1 SOT23 TRANSISTOR
Text: SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current
|
Original
|
OT-23
OT--23
S9013LT1
S9013LT1
037TPY
950TPY
550REF
022REF
MARKING E1 SOT23 TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range
|
Original
|
OT-23
OT-23
S9013LT1
500mA
S9013LT1
30MHz
|
PDF
|
Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
|
Original
|
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
|
PDF
|
Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
|
Original
|
huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
|
PDF
|
S9013LT1
Abstract: No abstract text available
Text: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm
|
OCR Scan
|
OT-23
S9013LT1
150eC
S9013LT1
160uA
140uA
120uA
100uA
|
PDF
|
transistor BR 9013
Abstract: 9013 NPN transistor 9013 H NPN
Text: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V
|
OCR Scan
|
S9013LT1
Symbo350
S9013LT1
transistor BR 9013
9013 NPN
transistor 9013 H NPN
|
PDF
|