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    S8064 Search Results

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    S8064 Price and Stock

    Panasonic Electronic Components AXK6S80647YG

    CONN HDR 80POS SMD GOLD
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    DigiKey AXK6S80647YG Reel 1,000 1,000
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    AXK6S80647YG Cut Tape 351 1
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    AXK6S80647YG Digi-Reel 1
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    Avnet Americas AXK6S80647YG 14 Weeks 1,000
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    Mouser Electronics AXK6S80647YG 237
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    Newark AXK6S80647YG Cut Tape 841 1
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    AXK6S80647YG Reel 1,000
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    Avnet Abacus AXK6S80647YG Reel 15 Weeks 1,000
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    IBS Electronics AXK6S80647YG 1,000
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    Master Electronics AXK6S80647YG
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    Ozdisan Elektronik AXK6S80647YG
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    TE Connectivity S8064B

    OMNI POLMNT 23IN NF
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    Panasonic Electronic Components AXK6S80647YA

    CONN HDR 80POS SMD GOLD
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    DigiKey AXK6S80647YA 500
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    Avnet Americas AXK6S80647YA 15 Weeks 500
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    Newark AXK6S80647YA Reel 500
    • 1 $2.31
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    IBS Electronics AXK6S80647YA 251
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    Master Electronics AXK6S80647YA
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    RUNIC RS806-4.00YF5

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    TE Connectivity 202F221-51/164-0-CS8064

    BLOW-MOLDED PARTS
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    DigiKey 202F221-51/164-0-CS8064 Bulk 66
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    Mouser Electronics 202F221-51/164-0-CS8064
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    Newark 202F221-51/164-0-CS8064 Bulk 66
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    Master Electronics 202F221-51/164-0-CS8064
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    Sager 202F221-51/164-0-CS8064 1
    • 1 $49.77
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    • 100 $43.13
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    Find more S8064 price and stock on Findchips.com

    S8064 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    S8064 Hamamatsu Original PDF
    S8064 Hamamatsu Photonics Photo IC designed for near/far distance detection Original PDF
    S8064B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN NF Original PDF

    S8064 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional


    Original     		PDF S8030 S8064 S8064-10 443us 224us. 203us 224us 443us

    dual photodiode

    Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
    Text: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


    Original     		PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 dual photodiode photodiode "far infrared" KPIC1028E01

    photodiode "far infrared"

    Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
    Text: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


    Original     		PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 photodiode "far infrared" dual photodiode KPIC1028E01 S-8030

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


    Original     		PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    SC-89

    Abstract: Si1026X
    Text: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)


    Original     		PDF Si1026X SC-89 08-Apr-05 SC-89

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306

    Si1056X

    Abstract: SC-89
    Text: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1056X SC-89 Si1056X-T1-E3 Si1056X-T1-GE3 18-Jul-08 SC-89

    SI1050X-T1

    Abstract: SC-89 Si1050X Si1050
    Text: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available


    Original     		PDF Si1050X SC-89 Si1050X-T1-E3 Si1050X-T1-GE3 18-Jul-08 SI1050X-T1 SC-89 Si1050

    SC-89

    Abstract: Si1023X Si1023X-T1-E3
    Text: Si1023X Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 • TrenchFET Power MOSFET: 1.8 V Rated 1.6 at VGS = - 2.5 V - 300 • Very Small Footprint


    Original     		PDF Si1023X OT-563 SC-89 08-Apr-05 SC-89 Si1023X-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V


    Original     		PDF Si1035X 20ded 08-Apr-05

    sC89-6

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V RDS(on) (Ω) ID (A) 0.625 at VIN = 4.5 V ± 0.43 1.8 to 8 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 Halogen-free Option Available TrenchFET Power MOSFET


    Original     		PDF Si1040X SC89-6 08-Apr-05

    si2316ds-t1-e3

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11

    S8060

    Abstract: S8064B
    Text: Omnidirectional Antennas for Data Communications 12 ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ 800/900 MHz. Omnidirectional Antennas F Y I Antenna Selection Criteria Before you can make an informed antenna selection, you must know


    Original     		PDF anten00) S8244B S8243B S8240B S8064B S8063B S8060B S8060

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 08-Apr-05

    74285

    Abstract: SI1073X
    Text: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si1073X SC-89 Si1073X-T1-E3 Si1073X-T1-GE3 18-Jul-08 74285

    Untitled

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


    Original     		PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 11-Mar-11

    SI1024X-T1-GE3

    Abstract: Si1024X-T1-E3 SC-89 Si1024X S8064
    Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 • TrenchFET Power MOSFET: 1.8 V Rated 0.85 at VGS = 2.5 V 500 • Very Small Footprint


    Original     		PDF Si1024X OT-563 SC-89 08-Apr-05 SI1024X-T1-GE3 Si1024X-T1-E3 SC-89 S8064

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 08-Apr-05 SC-89