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    SI2306 Price and Stock

    Vishay Siliconix SI2306BDS-T1-GE3

    MOSFET N-CH 30V 3.16A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2306BDS-T1-GE3 Digi-Reel 11,844 1
    • 1 $0.86
    • 10 $0.535
    • 100 $0.86
    • 1000 $0.23934
    • 10000 $0.23934
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    SI2306BDS-T1-GE3 Cut Tape 11,844 1
    • 1 $0.86
    • 10 $0.535
    • 100 $0.86
    • 1000 $0.23934
    • 10000 $0.23934
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    SI2306BDS-T1-GE3 Reel 9,000 3,000
    • 1 -
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    • 10000 $0.2061
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    Vishay Siliconix SI2306BDS-T1-E3

    MOSFET N-CH 30V 3.16A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2306BDS-T1-E3 Cut Tape 9,432 1
    • 1 $0.88
    • 10 $0.55
    • 100 $0.88
    • 1000 $0.24674
    • 10000 $0.24674
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    SI2306BDS-T1-E3 Digi-Reel 9,432 1
    • 1 $0.88
    • 10 $0.55
    • 100 $0.88
    • 1000 $0.24674
    • 10000 $0.24674
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    SI2306BDS-T1-E3 Reel 9,000 3,000
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    • 10000 $0.21265
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    RS SI2306BDS-T1-E3 Bulk 3,000
    • 1 -
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    • 10000 $0.51
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    Quest Components SI2306BDS-T1-E3 128
    • 1 $0.54
    • 10 $0.45
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
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    New Advantage Corporation SI2306BDS-T1-E3 18,000 1
    • 1 -
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    • 10000 $0.2029
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    Micro Commercial Components SI2306K-TP

    N-CHANNEL MOSFET,SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2306K-TP Cut Tape 5,139 1
    • 1 $0.21
    • 10 $0.128
    • 100 $0.21
    • 1000 $0.05115
    • 10000 $0.05115
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    SI2306K-TP Digi-Reel 5,139 1
    • 1 $0.21
    • 10 $0.128
    • 100 $0.21
    • 1000 $0.05115
    • 10000 $0.05115
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    SI2306K-TP Reel 3,000 3,000
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    • 10000 $0.04227
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    Mouser Electronics SI2306K-TP 2,770
    • 1 $0.21
    • 10 $0.128
    • 100 $0.059
    • 1000 $0.046
    • 10000 $0.03
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    UMW SI2306A

    30V 3.5A 1.25W 57MR@10V,3.5A 3V@
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2306A Cut Tape 2,772 1
    • 1 $0.45
    • 10 $0.279
    • 100 $0.1763
    • 1000 $0.11852
    • 10000 $0.11852
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    SI2306A Digi-Reel 2,772 1
    • 1 $0.45
    • 10 $0.279
    • 100 $0.1763
    • 1000 $0.11852
    • 10000 $0.11852
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    Micro Commercial Components SI2306-TP

    MOSFET N-CH 30V 3.16A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2306-TP Digi-Reel 2,556 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
    • 10000 $0.09064
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    SI2306-TP Cut Tape 2,556 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
    • 10000 $0.09064
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    Mouser Electronics SI2306-TP 7,183
    • 1 $0.36
    • 10 $0.219
    • 100 $0.103
    • 1000 $0.089
    • 10000 $0.058
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    SI2306 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2306BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.16A SOT23-3 Original PDF
    SI2306BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.16A SOT23-3 Original PDF
    Si2306DS Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si2306DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si2306DS Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    Si2306DS SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI2306DS-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI2306DS-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI2306DS-T1 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SOT-23 Scan PDF
    SI2306-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF

    SI2306 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original
    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11 PDF

    SI2306BDS-T1-E3

    Abstract: Si2306BDS SI2306DS SI2306DS-T1-E3 120r Si2306DS-T1
    Text: Specification Comparison Vishay Siliconix Si2306BDS vs. Si2306DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2306BDS-T1-E3 Replaces Si2306DS-T1-E3 Si2306BDS-T1-E3 Replaces Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    Si2306BDS Si2306DS OT-23 Si2306BDS-T1-E3 Si2306DS-T1-E3 Si2306DS-T1 06-Nov-06 120r PDF

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original
    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306 PDF

    Si2306DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2306DS S-50383Rev. 21-Mar-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original
    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


    Original
    Si2306DS O-236 OT-23) Si2306DS-T1 08-Apr-05 PDF

    Si2306DS

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si2306DS O-236 OT-23) S-56945--Rev. 23-Nov-98 PDF

    Si2306BDS

    Abstract: 50395 SI2306 Si2306DS 73318
    Text: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si2306BDS to-10-V S-50395Rev. 14-Mar-05 50395 SI2306 Si2306DS 73318 PDF

    SOT 23 marking code a6 diode

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


    Original
    Si2306DS O-236 OT-23) Si2306DS-T1 S-31873--Rev. 15-Sep-03 SOT 23 marking code a6 diode PDF

    SI2306BD

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SI2306BD PDF

    SI-2306

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • • • • •   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2306 Halogen free available upon request by adding suffix "-HF"


    Original
    SI2306 OT-23 OT-23 SI-2306 PDF

    SI2306BDS-T1-E3

    Abstract: 50135 Si2306BDS
    Text: Si2306BDS New Product Vishay Siliconix N-Channel 30 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.047 @ VGS = 10 V 4.0 0.065 @ VGS = 4.5 V 3.5 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 3.0 TO-236 (SOT-23) G 1 S 2 3 D


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    Si2306BDS O-236 OT-23) Si2306BDS-T1--E3 08-Apr-05 SI2306BDS-T1-E3 50135 PDF

    Si2306DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2306DS 18-Jul-08 PDF

    A6 marking

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


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    Si2306DS O-236 OT-23) Si2306DS-T1 25lectual 18-Jul-08 A6 marking PDF

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original
    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 08-Apr-05 PDF

    4606 mosfet

    Abstract: AN609 Si2306BDS
    Text: Si2306BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    Si2306BDS AN609 03-May-07 4606 mosfet PDF

    Si2306BDS

    Abstract: Si2306DS
    Text: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2306BDS to-10-V 18-Jul-08 Si2306DS PDF

    Si2306DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2306DS 01-May-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original
    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11 PDF

    sirf Atlas IV

    Abstract: sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB
    Text: LTC3577-3/LTC3577-4 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


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    LTC3577-3/LTC3577-4 800mA, 500mA, 500mA LTC3577-3) LTC3577-4) DFN14 LTC4098 600mA QFN20 sirf Atlas IV sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB PDF

    LTC3577-1

    Abstract: LTC3577
    Text: LTC3577/LTC3577-1 Highly Integrated 6-Channel Portable PMIC DESCRIPTION FEATURES n n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


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    LTC3577/LTC3577-1 800mA, 500mA, 500mA DFN14 LTC4098 600mA QFN20 3577fa LTC3577-1 LTC3577 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3576/LTC3576-1 Switching Power Manager with USB On-the-Go + Triple Step-Down DC/DCs DESCRIPTION FEATURES n n n n n n n n n Bidirectional Switching Regulator with Bat-Track Adaptive Output Control Provides Efficient Charging and a 5V Output for USB On-The-Go


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    LTC3576/LTC3576-1 A/400mA/400mA LTC3576) LTC3576-1) 600mA 38-Pin LTC4098/LTC4098-1 V/25mA LTC4098-1) 14-Pin PDF

    Sirf Atlas IV

    Abstract: No abstract text available
    Text: LTC3677-3 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation n Triple Adjustable High Eficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT n I2C Adjustable SW Slew Rates for EMI Reduction


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    LTC3677-3 800mA, 500mA, 500mA 150mA QFN28 LTC3557/ LTC3557-1 LTC3557-1 Sirf Atlas IV PDF

    Supercool

    Abstract: peltier SI2305 TEC H bridge PWM Regulator peltier wheatstone bridge ntc 10k 10% D5 CDRH6D28 a 1757 transistor MAX4122
    Text: Maxim/Dallas > App Notes > FIBER-OPTIC CIRCUITS SENSOR SIGNAL CONDITIONERS TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: PWM, temperature controller, thermoelectric cooler, TEC Sep 27, 2002 APPLICATION NOTE 1757 HFAN-08.2.1: PWM Temperature Controller for Thermoelectric


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    HFAN-08 com/an1757 MAX1637: MAX4250: AN1757, APP1757, Appnote1757, Supercool peltier SI2305 TEC H bridge PWM Regulator peltier wheatstone bridge ntc 10k 10% D5 CDRH6D28 a 1757 transistor MAX4122 PDF