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    S806 Search Results

    S806 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    932S806CGLF Renesas Electronics Corporation Clock Chip for 2 and 4-way AMD K8-based servers Visit Renesas Electronics Corporation
    932S806CGLFT Renesas Electronics Corporation Clock Chip for 2 and 4-way AMD K8-based servers Visit Renesas Electronics Corporation
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    S806 Price and Stock

    Mallory Sonalert Products Inc MAS806Q

    BUZZER PIEZO 12V 26MM TH
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    DigiKey MAS806Q Box 4,032 1
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    Mouser Electronics MAS806Q 554
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    Master Electronics MAS806Q 50
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    Sager MAS806Q 1
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    Taiwan Semiconductor SFAS806G

    DIODE GEN PURP 400V 8A TO263AB
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    DigiKey SFAS806G Cut Tape 1,590 1
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    SFAS806G Digi-Reel 1,590 1
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    Panasonic Electronic Components AXK6S80647YG

    CONN HDR 80POS SMD GOLD
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    DigiKey AXK6S80647YG Digi-Reel 1,351 1
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    AXK6S80647YG Cut Tape 1,351 1
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    Ozdisan Elektronik AXK6S80647YG
    • 1 $3.55245
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    • 1000 $3.2295
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    Microchip Technology Inc DSPIC33EP64GS806-E-PT

    IC MCU 16BIT 64KB FLASH 64TQFP
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    DigiKey DSPIC33EP64GS806-E-PT Tray 788 1
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    Microchip Technology Inc DSPIC33EP128GS806-E-PT

    IC MCU 16BIT 128KB FLASH 64TQFP
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    DigiKey DSPIC33EP128GS806-E-PT Tray 477 1
    • 1 $8.04
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    Find more S806 price and stock on Findchips.com

    S806 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S-8-06 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    S8-06 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S-8-06 Origin Electric Silicon Rectifying Diodes Scan PDF
    S-806 Seiko Instruments VOLTAGE DETECTOR Scan PDF
    S8060B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 17IN NF Original PDF
    S8063B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN 806-866MHZ 5DBI Original PDF
    S8064 Hamamatsu Original PDF
    S8064 Hamamatsu Photonics Photo IC designed for near/far distance detection Original PDF
    S8064B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN NF Original PDF
    S8065 Littelfuse ILICON CONTROLLED RECTIFIER,800V V Original PDF
    S8065J Littelfuse SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA Original PDF
    S8065J Teccor Electronics SCRs Original PDF
    S8065J Teccor Electronics SCRs (1 - 70 Amps) Original PDF
    S8065J Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
    S8065JTP Littelfuse SCRs - Single, Discrete Semiconductor Products, SCR NON-SENS 800V 65A ISO TO218X Original PDF
    S8065JV Teccor Electronics SCR Original PDF
    S8065K Littelfuse SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA Original PDF
    S8065K Unknown Thyristor, insulated, 800V 65A IGT<50mA, Thyristor Original PDF
    S8065K Teccor Electronics SCRs (1 - 70 Amps) Original PDF
    S8065K Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF

    S806 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s8065j

    Abstract: No abstract text available
    Text: Part: S8065J Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs


    Original     		PDF S8065J O-218x

    Untitled

    Abstract: No abstract text available
    Text: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional


    Original     		PDF S8030 S8064 S8064-10 443us 224us. 203us 224us 443us

    dual photodiode

    Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
    Text: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


    Original     		PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 dual photodiode photodiode "far infrared" KPIC1028E01

    photodiode "far infrared"

    Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
    Text: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


    Original     		PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 photodiode "far infrared" dual photodiode KPIC1028E01 S-8030

    S8065K

    Abstract: No abstract text available
    Text: Part: S8065K Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs


    Original     		PDF S8065K O-218

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


    Original     		PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    S6025

    Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
    Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more


    Original     		PDF O-218AC O-202AB O-218X O-220AB tec20 S6025 S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020

    Si3407DV

    Abstract: No abstract text available
    Text: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized


    Original     		PDF Si3407DV Si3407DV-T1-E3 08-Apr-05

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    SUM75N15-18P-E3

    Abstract: No abstract text available
    Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUM75N15-18P O-263 SUM75N15-18P-E3 08-Apr-05 SUM75N15-18P-E3

    Si6463BDQ

    Abstract: No abstract text available
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 08-Apr-05

    SC-89

    Abstract: Si1026X
    Text: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)


    Original     		PDF Si1026X SC-89 08-Apr-05 SC-89

    72511

    Abstract: Si6433BDQ
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511

    Untitled

    Abstract: No abstract text available
    Text: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


    Original     		PDF Si6441DQ Si6441DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S4020L

    Abstract: thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V
    Text: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 S4020L thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    tsc4429

    Abstract: TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174
    Text: Code Key: PU – PP – FE – SP – Plug-In Upgrade Pin-for-Pin Compatible Functional Equivalent Similar Part AMCC MAXIM S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 S3040 S3043 S3044 S3047 S3049 S3050 MAX3690 MAX3680 MAX3690 MAX3675 MAX3675


    Original     		PDF S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 tsc4429 TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8

    e616

    Abstract: SK040R ES35A SK025N S4010R
    Text: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 e616 SK040R ES35A SK025N S4010R

    1A20A

    Abstract: teccor thyristor s8015l e526 E521 S2008L S4010R
    Text: * ess* D aagge ZEED k c k IIZ Paac N d P GN 9 teted OOG166339 c leec ECC 771 SSeel . RRE ##EE L . iliele U.L FF E6 U TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X A 3-Leaded Surface Mount Compak K TO-220 TO-251 V-Pak G SCRs 1 A to 70 A E5 General Description


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 1A20A teccor thyristor s8015l e526 E521 S2008L S4010R

    teccor thyristor s4015l

    Abstract: thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R
    Text: l Se ec ag * es ED Z NI G 39 CO 716 E R #E te L. U. k ac d P le Fi E6 TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-Leaded Surface Mount Compak TO-220 MT2 MT1 TO-251 V-Pak G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 teccor thyristor s4015l thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306

    Si1056X

    Abstract: SC-89
    Text: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1056X SC-89 Si1056X-T1-E3 Si1056X-T1-GE3 18-Jul-08 SC-89

    S5500G

    Abstract: S-8-08FR S-8R-06FR S5103 S5166 S5500D S5102 S5104 S-8R-01FR S5277D
    Text: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08


    OCR Scan     		PDF S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S527TN S5500G S-8-08FR S-8R-06FR S5166 S5500D S5102 S5104 S-8R-01FR