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    S512K8N

    Abstract: smd A018 3 pin smd A018 SCD1664 5962-9561307HYC ACT-S512K8 5962-9561310HUC
    Text: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features Low Power Monolithic CMOS 512K x 8 SRAM • Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■ +5 V Power Supply


    Original     		PDF S512K8 MIL-PRF-38534 DI-40 MIL-STD-883 SCD1664 S512K8N smd A018 3 pin smd A018 5962-9561307HYC ACT-S512K8 5962-9561310HUC

    smd A018

    Abstract: No abstract text available
    Text: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■


    Original     		PDF S512K8 MIL-PRF-38534 MIL-STD-883 SCD1664 smd A018

    Untitled

    Abstract: No abstract text available
    Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns


    OCR Scan     		PDF S512K8-XCX 512Kx8 120ns MIL-STD-883 01HXX 02HXX 03HXX 04HXX 05HXX

    Untitled

    Abstract: No abstract text available
    Text: T7 512 Kx8 M/HITE /MICROELECTRONICS W M S512K8-XXX MONOLITHIC SRAM FEATURES • Access Tim es 70, 8 5 ,1 0 0 and 120nS C om m ercial, Ind ustria l and M ilita ry Tem perature Range ■ MIL-STD-883 C om pliant Devices A vailable , S M D # 5962-95613 pending


    OCR Scan     		PDF S512K8-XXX 120nS MIL-STD-883 WMS512K8-XFX, 01HYX* 100nS 02HYX* 03HYX* 04HYX*

    Untitled

    Abstract: No abstract text available
    Text: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range


    OCR Scan     		PDF ACT-S512K8 MIL-PRF-38534 MIL-STD-883 SCD1664

    Untitled

    Abstract: No abstract text available
    Text: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range


    OCR Scan     		PDF ACT-S512K8 MIL-PRF-38534 MIL-STD-883 SCD1664

    0730

    Abstract: TRC-170
    Text: inova S512K8 _ Prelim inary Data 512K x 8 Static RAM Device Types Key Parameters S512K8 and S512K8L Access Time Cycle Time Output Enable Access


    OCR Scan     		PDF S512K8 S512K8 S512K8L S512K8X-45XX AMN-790 0730 TRC-170

    UA15

    Abstract: No abstract text available
    Text: WHITE /M IC R O E L E C T R O N IC S W S512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW ^ 32 31 30 29 28 27 26 25 24 D Vcc ÜA15 J A17 HWË H A13 H A8 H A9 U A11 Access Tim es 20, 25, 35, 45ns • S tandard M ic ro c irc u it D raw ing , 5962-92078


    OCR Scan     		PDF S512K8-XCX 512Kx8 I/02C MIL-STD-883 06HTX 07HTX 08HTX 09HTX UA15

    5962-9207806

    Abstract: 5962-9207806HXX QML-38534 WS512K8-35CQ WS512K8-45CQ 55cq
    Text: REVISIONS DESCRIPTION DATE YR-MO-DA APPROVED Table I; Changed the max limit for Iq q for device types 06 through 09 from 200 mA to 210 mA. Changed trie max limit for I q q q r for device types 06 through 09 from 10.4 mA to 12.8 mA. - sld_


    OCR Scan     		PDF R-20CQ WS512K8-20CQ WS512K8-20CLQ 003734b 5962-9207806 5962-9207806HXX QML-38534 WS512K8-35CQ WS512K8-45CQ 55cq

    Untitled

    Abstract: No abstract text available
    Text: 1- CS 512Kx8 MONOLITHIC SRAM ADVANCED S512K8B-XXXE * FEATURES • A cce ss T im e s 15, 17, 20, 25n s ■ L o w P o w e r B iC M O S ■ R e v o lu tio n a ry , C e n te r P o w e r/G ro u n d P in o u t JEDEC A p p ro v e d B iC M O S : ■ C o m m e rc ia l, In d u s tria l and M ilit a r y T e m p e ra tu re R ange


    OCR Scan     		PDF WMS512K8B-XXXE 512Kx

    SMD A1S

    Abstract: ACT-F512K8
    Text: i * “ / * \ * Ï V “* 1' “ S" w?-1 % , H.| m » . 1 M— • u i u ÛEROFLEX CIRCUIT TECHNOLOGY Features • Low Power Monolithic 512K x 8 FLASH ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 90,120 and 150nS ■ +5V Programing, 5V ±10% Supply


    OCR Scan     		PDF 150nS MIL-PRF-38534 MIL-STD-883 32PinDIP F512K8-A D04715b SMD A1S ACT-F512K8

    K855

    Abstract: QML-38534 5962-9561304HTA 5962-9561309HXC
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added device types 05 through 10. Added case outlines X, Z, and T. Redrew entire document. 96-08-23 K. A. Cottongim B Added device tVDes 11 throuah 13. Added case outline U. 96-10-22 K. A. Cottonaim C Made chanaes in accordance with NOR 5962-R289-97. -sld


    OCR Scan     		PDF 5962-R289-97. K855 QML-38534 5962-9561304HTA 5962-9561309HXC

    Untitled

    Abstract: No abstract text available
    Text: S512K8-XXX WHITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 PRELIMINARY* FEATURES • A c c e s s T i m e s 17, 2 0, 2 5, 35, 4 5, 55n S ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e Range ■ ■ 5 V o l t P o w e r S u p p ly


    OCR Scan     		PDF WMS512K8-XXX 512Kx8 08HZX 512KX 09HZX 10HZX 05HXX 06HXX 07HXX

    F16 - 100 HIP

    Abstract: F16 100 HIP K8N05
    Text: ÛEROFLEX Features Cl RCJTTECHNOLOGY • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -5 5 °C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55nS Maximum Access Times ■ +5 V Power Supply


    OCR Scan     		PDF MIL-PRF-38534 ACT-S512K8 MIL-STD-883 S512K8-A F16 - 100 HIP F16 100 HIP K8N05

    a1s smd

    Abstract: smd code a12 smd code A1s ACT-S512K8
    Text: « , m m - m - , -r m » „. 4 - -• _ _ - I T T atm jjhpgdBSifljliS r r m m T 1 :< f :i m it j r ii .* l l l l / 'i n 11 I L M 1 ■à* mmmm «Mi .T ~ _ m i m z t t r x 1 i * 4 1 ^ fr * - Features ■ ' ' SB i l 111 l a B s k K ■> >«. •


    OCR Scan     		PDF MlL-PRF-38534 ACT-S512K8 MIL-STD-883 471SL S512K8-A a1s smd smd code a12 smd code A1s

    Untitled

    Abstract: No abstract text available
    Text: WHITE /MICROELECTRONICS S512K8-XCX 512Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45nS PIN CONFIGURATION TOP VIEW E 1 A 16 E 2 A 14 E 3 A 12 E 4 A7 E 5 A6 E 6 A5 E 7 A4 E 8 A3 E g A2 E 10 A1 E 11 AO E 12 i/oo E 13 i/oi E 14 I/0 2 E 15


    OCR Scan     		PDF WS512K8-XCX 512Kx8 IL-STD-883 512KX 06HXX 07HXX 08HXX 09HXX