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    S5038 Price and Stock

    Microchip Technology Inc S50380

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    DigiKey S50380 Bulk 100
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    Avnet Americas S50380 Bulk 29 Weeks 100
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    Mouser Electronics S50380
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    Newark S50380 Bulk 100
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    Microchip Technology Inc S50380
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    Onlinecomponents.com S50380
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    NAC S50380 2
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    Master Electronics S50380
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    Ruland Manufacturing Co Inc KS50-3-8X16-PF

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    DigiKey KS50-3-8X16-PF Bag 1
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    Ruland Manufacturing Co Inc KS50-3-8X16-SS

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    DigiKey KS50-3-8X16-SS Bag 1
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    Ruland Manufacturing Co Inc KS50-3-8X16:40-PF

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    DigiKey KS50-3-8X16:40-PF Bag 1
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    Ruland Manufacturing Co Inc KS50-3-8X16:30-PF

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    DigiKey KS50-3-8X16:30-PF Bag 1
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    S5038 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S50380 ABB Group Power Semiconductor Data Book 1976 Scan PDF
    S50380 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S50380TS Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    S5038 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2321DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2321DS 18-Jul-08

    Si3447BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3447BDV 18-Jul-08

    Si3443DV

    Abstract: 70-904
    Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3443DV 18-Jul-08 70-904

    Si3442BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3442BDV 18-Jul-08

    hypertac connector insertion tools

    Abstract: No abstract text available
    Text: HG Series HyperGrip - Push/Pull Plastic Circular Connectors General Specifications - HyperGrip Number of Contacts Contact Diameter Current Rating Amps Contact Resistance (milliohms) Contact Extraction Force per contact (oz.) Termination Styles Available


    Original
    PDF M22520/2-01 K1775 T2030 T2080 T2057 T2085-20 T2085-34 T2085-85 S50387 S50386 hypertac connector insertion tools

    Si2306DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2306DS S-50383Rev. 21-Mar-05

    Si3445DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3445DV S-50383Rev. 21-Mar-05

    SI2308DS

    Abstract: Si2308DS SPICE Device Model 70902
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2308DS S-50383Rev. 21-Mar-05 Si2308DS SPICE Device Model 70902

    SUD08P06-155L

    Abstract: No abstract text available
    Text: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature


    Original
    PDF SUD08P06-155L O-252 SUD08P06-155L--E3 S-50385--Rev. 07-Mar-05 SUD08P06-155L

    Si3442BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3442BDV S-50383Rev. 21-Mar-05

    Si3455DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3455DV S-50383Rev. 21-Mar-05

    Si3434DV

    Abstract: si3434 71652 61A18
    Text: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3434DV S-50383Rev. 21-Mar-05 si3434 71652 61A18

    Si3455ADV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3455ADV S-50383Rev. 21-Mar-05

    72555

    Abstract: Si3440DV
    Text: SPICE Device Model Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3440DV 18-Jul-08 72555

    Si3459DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3459DV 18-Jul-08

    Si2328DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2328DS 18-Jul-08

    50386

    Abstract: SI4900DY
    Text: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free


    Original
    PDF Si4900DY Si4900DY-T1--E3 08-Apr-05 50386

    50386

    Abstract: No abstract text available
    Text: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free


    Original
    PDF Si4900DY Si4900DY-T1--E3 S-50386--Rev. 07-Mar-05 50386

    Si2333DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2333DS 18-Jul-08

    Si2319DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2319DS 18-Jul-08

    Si3441BDV SPICE Device Model

    Abstract: Si3441BDV
    Text: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3441BDV 18-Jul-08 Si3441BDV SPICE Device Model

    ECHO canceller IC

    Abstract: audio echo cancellation ic Digital ECHO microphone mixing circuit MCS-51 MT9315 MT9315AE MT9315AP lz 24h k Echo Processor IC AAS14
    Text: CMOS g M ITEL MT9315 Acoustic Echo Canceller Advance Information SEM ICON D U CTOR D S5038 Features ISSUE 3 February 1999 O rdering Inform ation • C ontains two echo cancellers: 1 12ms acoustic echo ca nce lle r + 16ms line echo canceller • W orks w ith low cost voice codec. ITU-T G .7 1 1


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    PDF MT9315 112ms ECHO canceller IC audio echo cancellation ic Digital ECHO microphone mixing circuit MCS-51 MT9315 MT9315AE MT9315AP lz 24h k Echo Processor IC AAS14

    Untitled

    Abstract: No abstract text available
    Text: CMOS MITEL Acoustic Echo Canceller Advance Information SEM ICON D U CTOR D S5038 Features • • • • • • • • • MT9315 Contains two echo cancellers: 112ms acoustic echo canceller + 16ms line echo canceller Works with low cost voice codec. ITU-T G.711


    OCR Scan
    PDF S5038 MT9315 112ms MT9315AP MT9315AE 14dBmo

    BROWN BOVERI

    Abstract: R50320 S50310 R50310 R50330 R50340 R50360 S50320 S50330 S50340
    Text: BBC •FMC B R O W N , B O V E R I & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BROWN BOVERI G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 503 250 Amperes Average


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    PDF D-6840 S50310 R50310 S50320 R50320 S50330 R50330 S50340 R50340 S50360 BROWN BOVERI R50360