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Rochester Electronics LLC PTVS22VP1UP,115 PTVSXP1UP SERIES - 600 W TRANSIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VP1UP,115	Bulk	98,000		2,630	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Nexperia PTVS22VS1UR,115 TVS DIODE 22VWM 35.5VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UR,115	Reel	51,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0835	Buy Now
	PTVS22VS1UR,115	Cut Tape	2,115		1	1 $0.28 10 $0.213 100 $0.1281 1000 $0.0835 10000 $0.0835	Buy Now
Mouser Electronics	PTVS22VS1UR,115		4,271			1 $0.28 10 $0.213 100 $0.129 1000 $0.084 10000 $0.083	Buy Now
Newark	PTVS22VS1UR,115	Cut Tape	2,067		5	1 $0.412 10 $0.332 100 $0.206 1000 $0.135 10000 $0.135	Buy Now
TTI	PTVS22VS1UR,115	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.088	Buy Now
TME	PTVS22VS1UR,115				3	1 - 10 $0.303 100 $0.153 1000 $0.135 10000 $0.122	Get Quote

NexGen Digital	PTVS22VS1UR,115		1,530			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	PTVS22VS1UR,115			6 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.08789	Buy Now
Avnet Silica	PTVS22VS1UR,115		153,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	PTVS22VS1UR,115		9,079			1 - 10 - 100 - 1000 - 10000 $0.0856	Buy Now
	PTVS22VS1UR,115	Cut Tape	4,712			1 - 10 $0.244 100 $0.111 1000 $0.0816 10000 $0.0802	Buy Now
EBV Elektronik	PTVS22VS1UR,115			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	PTVS22VS1UR,115		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1048	Buy Now
Rochester Electronics LLC PTVS22VU1UPAZ TVS DIODE 22VWM 35.5VC 3HUSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VU1UPAZ	Bulk	27,845		3,050	1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now
Rochester Electronics LLC PTVS22VS1UR/8X PTVSXS1UR - 400 W TRANSIENT VOL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UR/8X	Bulk	18,000		4,445	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
Rochester Electronics LLC PTVS22VP1UTP,115 TVS DIODE 22VWM 35.5VC CFP5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VP1UTP,115	Bulk	8,279		2,509	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now

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S22V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MMIC SWITCH Abstract: RTPA5250-130 Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information	Original	PDF	RTPA5250-130 RTPA5250-130 MMIC SWITCH
Untitled Abstract: No abstract text available Text: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm \| \| \| \| \| \| \| \| \| \| \| \| \| \| APPLICATIONS: • GPS STANDARD SPECIFICATIONS:	Original	PDF	42MHz AFS1575 42W90-TS5 ISO9001
Untitled Abstract: No abstract text available Text: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm \| \| \| \| \| \| \| \| \| \| \| \| \| \| APPLICATIONS: • GPS STANDARD SPECIFICATIONS:	Original	PDF	42MHz AFS1575 42W90-TS5 ISO9001
DIVERSITY MODULE MURATA Abstract: raytheon ltcc 78-S11 RAYTHEON RTPA5250-130 murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic Text: RTPA5250-130 3.3V UNII Band Power Amplifier MMIC/Switch Module for WLAN Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information	Original	PDF	RTPA5250-130 RTPA5250-130 RTPA5250-78 RTPA5250-130, 288mA, 320mA, DIVERSITY MODULE MURATA raytheon ltcc 78-S11 RAYTHEON murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic
CAPACITOR SM Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	PDF	SGL-0263 SGL-0263 EDS-101502 CAPACITOR SM S11V ID11 CL10B103KBNC LL1608-FS27NJ S12vs inductor manufact
Untitled Abstract: No abstract text available Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	PDF	SGL-0263 SGL-0263 EDS-101502
Untitled Abstract: No abstract text available Text: M icroelectronics Lim ited 3 AMP, 3-TERMINAL POSITIVE REGULATORS IP123A, IP323A, IP123, LM123 FEATURES DESCRIPTION The IP123A/IP323A/LM123/IP 123 series of three terminal, three amp regulators is available with several fixed output voltages and three p a c k a g e o p tio n s , g re a tly	OCR Scan	PDF	IP123A, IP323A, IP123, LM123 IP123A/IP323A/LM123/IP IP123A O-257
f4316 Abstract: F4319F MGF4319F Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	PDF	F4310F F4316F F4319F f4316 F4319F MGF4319F
mitsubishi microwave Abstract: MGF1601 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and	OCR Scan	PDF	MGF1601B mitsubishi microwave MGF1601
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES	OCR Scan	PDF	GF0904A 15dBm
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> \| M G F0906B \| _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES	OCR Scan	PDF	F0906B 37dBm
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 37V 404S 1 4 .0 — 14.5G H z BAND SW INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	PDF	2400m
7066583 Abstract: Lea tv Text: PLC-45 4 5 W 5 i n g l e Q u i p ut L E D P o w e r S u p p l y scries \| F ? a 1 u re s : U ì v t ì ' S j A C inpul : F u i id ng* F j y sù -aiiid plaslieeass *i1h fe-ii -lai alaùt slyle cl I/O Hu 1-1n t m l i i i c u f l H i i m i n g ìH lvm flc usteM e ¿¡d 1 ij1 vc 1^je a id rjjrrem lévtìì	OCR Scan	PDF	PLC-45 K75QH l15VAC) iii23QVAC) 7066583 Lea tv
LM340-12 TO-3 Abstract: LM140-12 IP140A IP7800 IP7800A LM140 LM340 LM140H-xx IP7815 TO220 LM340-12 Text: 1 Amp, 3-Terminal Positive Regulators INTEGRATED SEMICONDUCTORS, LTD. Features The IP140A / L M 140/ IP 240A / L M 240/ IP340A/ L M 3 4 0 / IP 7 8 0 0 A / IP 7 8 0 0 / IP 7 8 0 0 A C / IP 78 00C series of three-term inal regulators is available with several fixed output voltages making them	OCR Scan	PDF	IP140A/ LM140/ IP240A/ LM240/ IP340A/ LM340/ IP7800A/ IP7800/ IP7800AC/ IP7800C LM340-12 TO-3 LM140-12 IP140A IP7800 IP7800A LM140 LM340 LM140H-xx IP7815 TO220 LM340-12

22CV10AP Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610 Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)	OCR Scan	PDF	MGF0909A MGF0909A, 38dBm 20dBm
S2-5V Abstract: LM340-15 LM140 LM140A LM340 LM340-12 LM340-5 LM340A S30V Text: 202 — LM140, LM140A, LM340, LM340A > 'J — X OEìtiti, 3 [L M 340] • ^ * ^ « 1 4 0 0 ^ = 0 . 2 2 ^ , C W = 0 .1 //F , §2 rii 5È & f* VOUT T j—2 5 V , 5m A á lour Si 1A 5 m A ¿ I0(/T¿ 1A ,P0 S 15W y MJN< t/w< i/IouT~500m A , Tj= 25Z = V'/,vSl'mï	OCR Scan	PDF	LM140, LM140A, LM340, LM340A CLM3403 22/uF, LM340-5 LM340-12 LM340-15 500mA, S2-5V LM340-15 LM140 LM140A LM340 LM340-12 LM340-5 LM340A S30V
ha 1406 ha Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package	OCR Scan	PDF	MGF1801B MGF1801B, ha 1406 ha
Untitled Abstract: No abstract text available Text: De \| aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is	OCR Scan	PDF
800w power amplifier circuit diagram Abstract: 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v Text: ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD., NEPTUNE, N.J. 07753 83 458-001 - FIVE YEAR WARRANTY El e c t r o n i c Me as ur em e nt s, Inc. w a r r a n t s this equipment m a n u f a c t u r e d by l i b and sold by us Dr our a u t h o r i z e d agents to a m a n u f a c t u r e r or	OCR Scan	PDF	R207B 2-30K-5W CI47P 2-I5-25W 25K-5W IN4740A MR752 2-30K -J5-23W 800w power amplifier circuit diagram 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v
Untitled Abstract: No abstract text available Text: KA78TXX LINEAR INTEGRATED CIRCUIT 3-TERMINAL 3A POSITIVE VOLTAGE REGULATORS This family of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 amperes. FEATURES • • • • • • • • Output current in excess of 3.0 ampere	OCR Scan	PDF	KA78TXX O-220 100KHz,
gD 679 transistor Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	PDF	MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: M5M27C102P RV-15 1048576-BIT gD 679 transistor MGF4410 MGF4416D MGF4417D MGF4418D M5M27C102
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation	OCR Scan	PDF	MGF0907B GF-21

S22V Search Results

S22V Price and Stock

Rochester Electronics LLC PTVS22VP1UP,115

Nexperia PTVS22VS1UR,115

Rochester Electronics LLC PTVS22VU1UPAZ

Rochester Electronics LLC PTVS22VS1UR/8X

Rochester Electronics LLC PTVS22VP1UTP,115

S22V Datasheets Context Search

MMIC SWITCH

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DIVERSITY MODULE MURATA

CAPACITOR SM

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f4316

mitsubishi microwave

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7066583

LM340-12 TO-3

22CV10AP

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S2-5V

ha 1406 ha

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800w power amplifier circuit diagram

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gD 679 transistor

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