Untitled
Abstract: No abstract text available
Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7
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AH420
AH420
1-800-WJ1-4401
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S465A
Abstract: FLM1314-18F ED-4701
Text: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM1314-18F
FLM1314-18F
25ong,
S465A
ED-4701
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transistor marking code 1325
Abstract: R04003 ims pcb filtronic Solid State
Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor marking code 1325
R04003
ims pcb
filtronic Solid State
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ED-4701
Abstract: FLM1314-18F RM-1101
Text: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: add=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50 ・Hermetically Sealed Package DESCRIPTION
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FLM1314-18F
FLM1314-18F
ED-4701
RM-1101
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transistor SMD P2F
Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor SMD P2F
smd p2f transistor
smd code z16
transistor marking code 1325
transistor z14 smd
0604HQ-1N1
T491B105M035AS7015
filtronic Solid State
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XC2500A-03
Abstract: TGA2601-SM
Text: TGA2601-SM 800 - 3000 MHz High IP3 Dual pHEMT Key Features and Performance • • • 800 - 3000 MHz Frequency Range <0.7 dB Noise Figure Gain 24 dB @ 900 MHz, 19 dB @ 1950 MHz, 19 dB @ 2600 MHz Bias Conditions: 4 V/100 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA2601-SM
TGA2601-SM
TGA2601-SM,
XC2500A-03
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WJA1020
Abstract: No abstract text available
Text: WJA1020 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 4000 MHz 17 dB Gain @ 1.9GHz +17 dBm P1dB @ 1.9GHz +34 dBm OIP3 @ 1.9GHz Operates from +5V @70mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
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WJA1020
WJA1020
OT-89
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EV-SP-000044-001
Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
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FPD2000AS
33dBm
46dBm
FPD2000AS
85GHz)
EB2000AS-AA
DS100125
EV-SP-000044-001
FPD200
CB100
FPD20
RO4003
cw 7687
A114 es
IPC 9701
W2020
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WJA1020
Abstract: No abstract text available
Text: WJA1020 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 4000 MHz 17 dB Gain @ 1.9GHz +17 dBm P1dB @ 1.9GHz +34 dBm OIP3 @ 1.9GHz Operates from +5V @70mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
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WJA1020
OT-89
WJA1020
1-800-WJ1-4401
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resistor 10ohm
Abstract: 486 motherboard schematic TGA2602-SM 2.2Kohm resistor 225S12
Text: Advance Product Information April 11, 2006 800 - 3000MHz High IP3 Dual LNA TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm
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3000MHz
TGA2602-SM
V/100mA
TGA2602-SM
100mA
1950MHz.
resistor 10ohm
486 motherboard schematic
2.2Kohm resistor
225S12
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ims pcb
Abstract: No abstract text available
Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
PARSTD-1686
MIL-HDBK-263.
FPD1000AS-EB
EB-1000AS-AB
880MHz)
EB-1000AS-AA
85GHz)
ims pcb
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RESISTOR 10OHM
Abstract: 22kohm resistor 22pf capacitor
Text: Advance Product Information September 09, 2008 DC - 3000MHz High IP3 Dual pHEMT TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm
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3000MHz
TGA2602-SM
V/100mA
TGA2602-SM
1950MHz.
RESISTOR 10OHM
22kohm resistor
22pf capacitor
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SMD-B 053
Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:
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FPD4000AF
FPD4000AF
FPD4000AF-EB
EB-2000AS-AB
880MHz)
EB-2000AS-AA
85GHz)
EB-2000AS-AC
EB-2000AS-AE
SMD-B 053
BTS 308
atc600
ATC600S1R0
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fpd2000as
Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD2000AS
FPD2000AS
33dBm
46dBm
85GHz)
EB2000AS-AA
14GHz)
EB2000AS-AD
EB2000AS-AG
FPD200
CB100
FPD20
RO4003
InP HBT transistor low noise
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UM 9515
Abstract: Filtronic
Text: FMA219 Datasheet v2.3 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:
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FMA219
FMA219
MIL-STD-1686
MIL-HDBK-263.
UM 9515
Filtronic
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RESISTOR 10OHM
Abstract: 22pf capacitor
Text: Advance Product Information May 24, 2006 DC - 3000MHz High IP3 Dual pHEMT TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm
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3000MHz
TGA2602-SM
V/100mA
TGA2602-SM
1950MHz.
RESISTOR 10OHM
22pf capacitor
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CAPACITOR 33PF
Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT
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FPD1000AS
31dBm
42dBm
-52dBc
21dBm
FPD1000AS
14GHz)
EB1000AS-AD
CAPACITOR 33PF
8653 p
T491B105M035AS7015
ATC600S680
atc600s2r0bw
TP 220 bjt
Tyco 108-18
capacitor 1mf
BC 251 transistor
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transistor marking code 1325
Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
vp 3082
EV-SP-000044-001
MARKING W1 AD
PHEMT marking code a
ipc 9701
filtronic Solid State
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transistor Bc 542
Abstract: transistor bc 567
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power
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FPD1000AS
FPD1000AS
31dBm
42dBm
-52dBc
21dBm
85GHz)
EB-1000AS-AA
14GHz)
transistor Bc 542
transistor bc 567
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70GHz HEMT Amplifier
Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD1000AS
FPD1000AS
31dBm
42dBm
-52dBc
21dBm
880MHz)
EB1000AS-AB
70GHz HEMT Amplifier
smd code z16
transistor z14 smd
T491B105M035AS7015
atc600s2r0bw
max 9694 e
transistor bc 567
capacitor 1mf
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IM324
Abstract: No abstract text available
Text: FPD4000AS Datasheet v2.1 2.5W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE: Low parasitics AS package 34.5 dBm Output Power P1dB @1.8GHz 12 dB Power Gain (G1dB) @1.8GHz 45 dBm Output IP3 8V Operation 50% Power-Added Efficiency Evaluation Boards Available
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FPD4000AS
FPD4000AS
22-A114.
MIL-STD-1686
MIL-HDBK-263.
FPD4000AS-EB
EB-4000AS-AH
IM324
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UM 9515
Abstract: x-band mmic lna FMA219 LNA 9GHz Z 8607
Text: FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:
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FMA219
FMA219
35-38g.
UM 9515
x-band mmic lna
LNA 9GHz
Z 8607
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transistor marking code 1325
Abstract: FPD2000AS filtronic Solid State
Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
filtronic Solid State
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APH131C
Abstract: No abstract text available
Text: APH131C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Linear gain: 16 dB • PldB: 23 dBm • Built-in output power detector with reference port • Unconditionally stable • DC power: 4 Vdc at 600 mA Description and Applications
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APH131C
APH131C
9701455-S-J1
SA038
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