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    Essentra Components S1-5/16A

    HOLE PLUG SHT METAL 1.313" BLACK
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    DigiKey S1-5/16A Box 4,996 1
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    Mouser Electronics S1-5/16A 2,184
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    Onlinecomponents.com S1-5/16A
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    Essentra Components S15/16A

    HOLE PLUG SHT METAL .937" BLACK
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    DigiKey S15/16A Box 4,987 1
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    PUI Audio SMS-1516MS-2-R

    SPEAKR 16OHM 300MW TOP PORT 85DB
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    DigiKey SMS-1516MS-2-R Bulk 472 1
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    Mouser Electronics SMS-1516MS-2-R
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    Lapp Group S1516

    CABLE GLAND 8-16.99MM M25
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    DigiKey S1516 Bulk 227 1
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    Panasonic Electronic Components ABS1516413

    SWITCH SNAP ACT SPDT 0.1A 125V
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    DigiKey ABS1516413 Bulk 97 1
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    Avnet Americas ABS1516413 100
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    Mouser Electronics ABS1516413
    • 1 $5.81
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    • 100 $3.71
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    Find more S1516 price and stock on Findchips.com

    S1516 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    S1516 Lapp Group CABLE GLAND 8-17MM M25 POLYAMIDE Original PDF

    S1516 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA430DJT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline


    Original     		PDF Si8487DB Si8409DB 848xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)


    Original     		PDF IRF820S, SiHF820S IRF820L, SiHF820L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

    74HC042

    Abstract: pd8861 DIP10 74HC04 S5400 74AC042
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD8861 5400 画素x3 列 カラーCCD リニア・イメージ・センサ µ PD8861 は，CCD（Charge Coupled Device）によって走査をする，色分解と光から電圧への変換機能を持つ 5400


    Original     		PDF PD8861 PD8861CY-A DIP10 mm400 S15167JJ4V0DS00 S15167JJ4V0DS S5399 74HC042 pd8861 74HC04 S5400 74AC042

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQS850EN www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQS850EN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7461DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) () ID (A) 0.0145 at VGS = -10 V -14.4 0.0190 at VGS = -4.5 V -12.6 PowerPAK • Material categorization: for definitions of compliance please see


    Original     		PDF Si7461DP Si7461DP-T1-E3 Si7461DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQM50P03-07 www.vishay.com Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQM50P03-07 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74HC04

    Abstract: S5400 what is a cds sensor
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.


    Original     		PDF PD8861 PD8861 74HC04 S5400 what is a cds sensor

    PD8861

    Abstract: 74HC04 S5400
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD8861 C12769J S15167JJ4V0DS PD8861 74HC04 S5400

    s2513

    Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
    Text: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing


    Original     		PDF P-2631996 E146370 LR50370-10 SKINTOP00 s2513 MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438

    Untitled

    Abstract: No abstract text available
    Text: IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D G G Note


    Original     		PDF IRF720S, SiHF720S IRF720L, SiHF720L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single D2PAK (TO-263) G D


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L O-263) O-262) 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 VDS (V) 8


    Original     		PDF Si8424CDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    201091B

    Abstract: zigbee traNsmitter receiver circuit Ember Corporation S1525 S1553 ZigBee IEEE 802.15.4-2003 QPSK DSSS S1516 SKY65336 SKY65337
    Text: APPLICATION NOTE Extending 2.4 GHz ZigBee Short-Range Radio Performance with Skyworks SKY65336/SKY65337 Front-End Modules Introduction Receiver Sensitivity Skyworks SKY65336 and SKY65337 ZigBee Front-End Modules FEMs can greatly enhance the performance of a ZigBee radio


    Original     		PDF SKY65336/SKY65337 SKY65336 SKY65337 201091B 201091B zigbee traNsmitter receiver circuit Ember Corporation S1525 S1553 ZigBee IEEE 802.15.4-2003 QPSK DSSS S1516

    Untitled

    Abstract: No abstract text available
    Text: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance


    Original     		PDF Si8425DB 842xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m


    Original     		PDF Si8457DB 845xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8439DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.025 at VGS = -4.5 V -9.2 VDS (V) -8 0.030 at VGS = -2.5 V -8.4 0.037 at VGS = -1.8 V -7.6 0.061 at VGS = -1.5 V -5.9 0.125 at VGS = -1.2 V


    Original     		PDF Si8439DB 843xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D D2PAK (TO-263)


    Original     		PDF IRF830S, SiHF830S IRF830L, SiHF830L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    74HC04

    Abstract: S5400
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.


    Original     		PDF PD8861 PD8861 74HC04 S5400

    PD8861

    Abstract: 74HC04 S5400
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    Untitled

    Abstract: No abstract text available
    Text: S IL S 25 to 25 e r ie s and 30 W a t t s 30 W a t t s - S I L S e r i e s Ultra-Wide Input,Single and Dual Output F eatures Ultra-Wide Input Voltage Range 2:1 and 4:1 Pi Network Input Filter Low Profile Package Current Limiting Short Circuit Protection


    OCR Scan     		PDF 20-72VDC J5b41b4

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d