IRFZ48
Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
18-Jul-08
IRFZ48
IRFZ48L
IRFZ48S
IRFZ48STRL
SiHFZ48
SiHFZ48L-E3
SiHFZ48S-E3
SiHFZ48STL
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
2002/95/EC
2002/95/EC.
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PDF
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IRFZ48L
Abstract: IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
18-Jul-08
IRFZ48L
IRFZ48S
IRFZ48STRL
SiHFZ48L-E3
SiHFZ48S-E3
SiHFZ48STL
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
2002/95/EC
2011/65/EU
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single D2PAK (TO-263) G D
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
O-263)
O-262)
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S_RC, IRFZ48L_RC, SiHFZ48S_RC, SiHFZ48L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFZ48S
IRFZ48L
SiHFZ48S
SiHFZ48L
AN609,
THERMALiHFZ48S
4540m
9402m
2442m
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PDF
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IEC 269-5
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
2002/95/EC
18-Jul-08
IEC 269-5
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT
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Original
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
IRFZ48S/SiHFZ48S)
IRFZ48L/SiHFZ48L)
12-Mar-07
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