LSI53C860
Abstract: UC5601QP LSI53C810
Text: TECHNICAL MANUAL LSI53C860 PCI to Ultra SCSI I/O Processor Version 2.1 April 2001 S14069 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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Original
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LSI53C860
S14069
DB14-000171-00,
LSI53C860
UC5601QP
LSI53C810
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 29 Qgd (nC) 57 Configuration Single Low figure-of-merit (FOM) Ron x Qg
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Original
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SiHW47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses
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Original
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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