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    S1319 Price and Stock

    Quest Manufacturing Company ES1319-0214

    LOCKING STORAGE DRAWER SHELF 2 U
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    DigiKey ES1319-0214 Box 1 1
    • 1 $124.46
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    RS ES1319-0214 Bulk 1
    • 1 $123.53
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    Altech Corporation MVS-1319

    PCB TERM BLOCK 381MMPS 19P VERT
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    DigiKey MVS-1319 Bulk 100
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    Mouser Electronics MVS-1319
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    RS MVS-1319 Bulk 10 Weeks 100
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    TestEquity LLC MVS-1319
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    BeStar Electronics Industry Co Ltd BPS1319H1.3

    SPEAKER TOP PORT 88DB RECTANGLE
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    DigiKey BPS1319H1.3 Box 5
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    Quest Manufacturing Company ES1319-0414

    LOCKING STORAGE DRAWER SHELF 4 U
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    DigiKey ES1319-0414 Ammo Pack 1
    • 1 $130.46
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    RS ES1319-0414 Bulk 6 Weeks 1
    • 1 $159.98
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    Altech Corporation MVS1319-3,5-H

    PCB TERM BLK, 3.50MM, 19 POLE, T
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    DigiKey MVS1319-3,5-H Bulk 100
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    Mouser Electronics MVS1319-3,5-H
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    TestEquity LLC MVS1319-3,5-H
    • 1 $6.8
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    S1319 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1319AAA-32.7680 Pericom Semiconductor VCO, Family Sx1319, 3.3V, O/P LVCMOS|LVTTL, TH, O/P 32.768MHz Original PDF

    S1319 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD6465

    Abstract: dot matrix printer circuit diagram datasheet microcontroller based dot matrix message display line follower robot using microcontroller uPD6464 ic q110 upc646 diode A2 12 line follower robot based on micro PC MONITOR VIDEO OUTPUT CONNECTOR
    Text: User’s Manual OSD LSIs µPD6461 µPD6462 µPD6464A µPD6465 µPD6466 Document No. S13197EJ1V0UMJ1 1st Edition Publication Date October 2000 N CP(K) Printed in Japan 1998 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note:


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    PDF PD6461 PD6462 PD6464A PD6465 PD6466 S13197EJ1V0UMJ1 devic88-6130 PD6465 dot matrix printer circuit diagram datasheet microcontroller based dot matrix message display line follower robot using microcontroller uPD6464 ic q110 upc646 diode A2 12 line follower robot based on micro PC MONITOR VIDEO OUTPUT CONNECTOR

    SKY73126-31

    Abstract: ID31 S1191 S1315 S1317
    Text: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low


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    PDF SKY73126-31: SKY73126-31 201112B ID31 S1191 S1315 S1317

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are


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    PDF SiHG22N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses


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    PDF SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    PC2807

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    SKY73126-31

    Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
    Text: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low


    Original
    PDF SKY73126-31: SKY73126-31 201112C S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319

    SI1489EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1489EDH www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si1489EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode A2 12

    Abstract: 1SV163 PD6465 uPD6464
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF d88-6130 diode A2 12 1SV163 PD6465 uPD6464

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16


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    PDF SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V


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    PDF SiS496EDNT SiS496EDNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    PC2807

    Abstract: PAD3 s3 amplifier
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PC2807 PC2807, PC2807 PC2807A PC2807W PC2807AW S13198JJ2V0DS00 200OS S13198JJ2V0DS PAD3 s3 amplifier

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SiRA06DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ858AEP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SQJ858AEP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single APPLICATIONS


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    PDF SiA449DJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    PD6464A

    Abstract: at 6462 ram IC cd 1619 CP PD6465 1SV163 HSYNC, VSYNC input output
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PD6461 PD6462 PD6464A PD6465 PD6466 S13197JJ1V0UMJ1 DO435-9608 FAX044435-9608 PD6464A at 6462 ram IC cd 1619 CP PD6465 1SV163 HSYNC, VSYNC input output

    PC2807

    Abstract: s3 amplifier 19Ma1
    Text: データ・シート BiCMOS 集積回路 BiCMOS Integrated Circuit µ PC2807,2807A 赤外線リモート・コントロール用プリアンプ µ PC2807, 2807A は,赤外線リモコン受光モジュール用のプリアンプ用に開発された半導体集積回路です。PIN フォ


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    PDF PC2807 PC2807, PC2807 PC2807A PC2807W PC2807AW S13198JJ2V0DS00 S13198JJ2V0DS s3 amplifier 19Ma1

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


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    PDF HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A

    Untitled

    Abstract: No abstract text available
    Text: SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)


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    PDF SiHP28N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHW64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses


    Original
    PDF SiHW64N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)


    Original
    PDF SiHG28N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    7m812

    Abstract: IDT7M S1319 Idt7m812
    Text: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS


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    PDF 512K-bi1 240yW IDT7187 7M812 7M912 812/ID MIL-STD-883, 7M912 IDT7M S1319 Idt7m812

    Untitled

    Abstract: No abstract text available
    Text: 512K 64K x 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • 64K x 8 fu lly s y n ch ro n o u s m em ory • H ig h -s p e e d -2 0 M H z read c y c le tim e • 16-bit syn ch ro n o u s a dd re ss Input • 8-bit synchronous data Input • S y n ch ro n o us c h ip se le ct a n d w rite e na b le


    OCR Scan
    PDF 16-bit 7MP6025 P6025 trig512K

    MP666

    Abstract: No abstract text available
    Text: 256K 16Kx 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • H ig h -de n sity 256K /128K C M O S sta tic RAM m o du le s • 16K x 16 orga n izatio n (IDT8M P656S) w ith 8K x 16 o p tio n (IDT8MP628)


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    PDF 16-BIT) /128K P656S) IDT8MP628) Nl-16 N9-10 MP666 8MP628 16-Bit MP666

    Untitled

    Abstract: No abstract text available
    Text: 512K 64K X 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • • • • • • • • • 64K x 8 fully synchronous memory High-speed-20M Hz read cycle time 16-bit synchronous address input 8-bit synchronous data input Synchronous chip select and write enable


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    PDF High-speed-20M 16-bit 43-pln 7MP6025 IDT7MP6025 be025 255ft S13-194