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    SIHF12N65E Search Results

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    SIHF12N65E Price and Stock

    Vishay Siliconix SIHF12N65E-GE3

    MOSFET N-CH 650V 12A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF12N65E-GE3 Tube 993 1
    • 1 $2.46
    • 10 $2.46
    • 100 $1.6248
    • 1000 $1.16655
    • 10000 $1.06656
    		Buy Now
    Bristol Electronics SIHF12N65E-GE3 150 3
    • 1 -
    • 10 $1.6875
    • 100 $1.4062
    • 1000 $0.8438
    • 10000 $0.8438
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    Quest Components SIHF12N65E-GE3 560
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.485
    • 10000 $1.485
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    SIHF12N65E-GE3 120
    • 1 $3
    • 10 $3
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
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    Vishay Intertechnologies SIHF12N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHF12N65E-GE3)
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    Avnet Americas SIHF12N65E-GE3 Reel 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.0573
    • 10000 $1.0573
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    Mouser Electronics SIHF12N65E-GE3 893
    • 1 $2.46
    • 10 $1.56
    • 100 $1.36
    • 1000 $1.09
    • 10000 $1.06
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    TTI SIHF12N65E-GE3 Tube 1,000 50
    • 1 -
    • 10 -
    • 100 $1.35
    • 1000 $1.09
    • 10000 $1.05
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    TME SIHF12N65E-GE3 1
    • 1 $2.24
    • 10 $2.01
    • 100 $1.6
    • 1000 $1.49
    • 10000 $1.49
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    EBV Elektronik SIHF12N65E-GE3 19 Weeks 50
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    Skyworks Solutions Inc SIHF12N65E-GE3

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    Bristol Electronics SIHF12N65E-GE3 700
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    SIHF12N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHF12N65E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A TO-220 Original PDF

    SIHF12N65E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC)


    Original     		PDF SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF12N65E AN609, 1135u 2552m 5225m 5370m 15-Oct-14

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16


    Original     		PDF SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration


    Original     		PDF SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12