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    S1119 Search Results

    S1119 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADS1119IRTER Texas Instruments 16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-WQFN -40 to 125 Visit Texas Instruments Buy
    ADS1119IPWT Texas Instruments 16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 Visit Texas Instruments
    ADS1119IPW Texas Instruments 16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 Visit Texas Instruments
    ADS1119IRTET Texas Instruments 16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-WQFN -40 to 125 Visit Texas Instruments Buy
    ADS1119IPWR Texas Instruments 16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    S1119 Price and Stock

    Essentra Components MWS1-1-19

    CBL CLIP WIRE SADDLE NAT PUSH IN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MWS1-1-19 Bulk 3,273 1
    • 1 $0.36
    • 10 $0.305
    • 100 $0.2371
    • 1000 $0.16939
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    Mouser Electronics MWS1-1-19 19
    • 1 $0.36
    • 10 $0.305
    • 100 $0.238
    • 1000 $0.169
    • 10000 $0.154
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    Newark MWS1-1-19 Bulk 957 1
    • 1 $0.395
    • 10 $0.347
    • 100 $0.27
    • 1000 $0.242
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    RS MWS1-1-19 Bulk 4 Weeks 1,000
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    Bisco Industries MWS1-1-19 529
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    DB Roberts MWS1-1-19
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    Master Electronics MWS1-1-19 3,000
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    • 10000 $0.138
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    Texas Instruments ADS1119IRTET

    IC ADC 16BIT SIGMA-DELTA 16WQFN
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    DigiKey ADS1119IRTET Reel 1,750 250
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    ADS1119IRTET Cut Tape 113 1
    • 1 $6.35
    • 10 $5.733
    • 100 $4.7462
    • 1000 $4.7462
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    Mouser Electronics ADS1119IRTET 698
    • 1 $6.34
    • 10 $5.73
    • 100 $4.74
    • 1000 $3.59
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    Texas Instruments ADS1119IPWT

    IC ADC 16BIT SIGMA-DELTA 16TSSOP
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    DigiKey ADS1119IPWT Reel 1,250 250
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    ADS1119IPWT Cut Tape 113 1
    • 1 $6.35
    • 10 $5.733
    • 100 $4.7462
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    Mouser Electronics ADS1119IPWT 2,729
    • 1 $6.3
    • 10 $5.67
    • 100 $4.07
    • 1000 $3.48
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    Chip1Stop ADS1119IPWT 250
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    ADS1119IPWT Cut Tape 244
    • 1 $6.24
    • 10 $4.82
    • 100 $4.13
    • 1000 $3.93
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    MEC Switches A/S 1S11-19.0

    CAP TACTILE ROUND CLEAR
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    DigiKey 1S11-19.0 Bag 1,161 1
    • 1 $0.6
    • 10 $0.545
    • 100 $0.4977
    • 1000 $0.40905
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    Newark 1S11-19.0 Bulk 779 10
    • 1 -
    • 10 $0.508
    • 100 $0.493
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    Texas Instruments ADS1119IPWR

    IC ADC 16BIT SIGMA-DELTA 16TSSOP
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    DigiKey ADS1119IPWR Reel 1,033 2,000
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    Mouser Electronics ADS1119IPWR 6,377
    • 1 $6.75
    • 10 $4.72
    • 100 $3.98
    • 1000 $3.11
    • 10000 $2.73
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    Chip1Stop ADS1119IPWR Cut Tape 1,544
    • 1 $4.78
    • 10 $3.69
    • 100 $3.16
    • 1000 $2.68
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    Win Source Electronics ADS1119IPWR 31,420
    • 1 -
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    • 100 $3.153
    • 1000 $2.827
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    Find more S1119 price and stock on Findchips.com

    S1119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking L4 mosfet sot23

    Abstract: SI2304
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304

    sir878

    Abstract: SIR878ADP vishay siliconix 1999
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir878 vishay siliconix 1999

    Untitled

    Abstract: No abstract text available
    Text: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2


    Original     		PDF SiS778DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		PDF S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128

    Untitled

    Abstract: No abstract text available
    Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.014 RDS(on) (Ω) at VGS = 4.5 V 0.015 ID (A) per leg


    Original     		PDF SQJ912EP 2002/95/EC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V


    Original     		PDF SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V


    Original     		PDF SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7115DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9e 0.315 at VGS = - 6 V - 8.6e Qg (Typ.) 23.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si7115DN 2002/95/EC Si7115DN-T1-E3 Si7115DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM120N02-1m3L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 20 RDS(on) () at VGS = 10 V 0.0013 RDS(on) () at VGS = 4.5 V 0.0017


    Original     		PDF SQM120N02-1m3L AEC-Q101 2002/95/EC O-263 O-263 SQM120N02-1m3L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    STR 22062

    Abstract: D1667 amp 4546 str w 5634 STR 5634 MAX09
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    socket s1

    Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND


    Original     		PDF S1-90 S1-82 S1-79 S1-77 TTL10 TTL12 TTL14 TTL18 TTL44 SGND/D15 socket s1 diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18

    SO8L

    Abstract: No abstract text available
    Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg


    Original     		PDF SQJ912EP 2002/95/EC AEC-Q101 SQJ912EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO8L

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7115DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9e 0.315 at VGS = - 6 V - 8.6e Qg (Typ.) 23.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si7115DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com


    Original     		PDF S1119 144-LED 320mA AS1119 30LEDs)

    SQJ912EP-T1-GE3

    Abstract: No abstract text available
    Text: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg


    Original     		PDF SQJ912EP 2002/95/EC AEC-Q101 SQJ912EP-T1-GE3 11-Mar-11 SQJ912EP-T1-GE3

    si1308edl application

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS)


    Original     		PDF Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11 si1308edl application

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4532ADY 2002/95/EC Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11

    SI1308EDL

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS)


    Original     		PDF Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11