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    S1026 Price and Stock

    STMicroelectronics ACS102-6T1-TR

    TRIAC ALTERNSTR 600V 0.2A 8SOIC
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    DigiKey ACS102-6T1-TR Reel 7,500 2,500
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    ACS102-6T1-TR Cut Tape 958 1
    • 1 $0.57
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    • 100 $0.3409
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    Mouser Electronics ACS102-6T1-TR 4,553
    • 1 $0.46
    • 10 $0.419
    • 100 $0.283
    • 1000 $0.222
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    Bristol Electronics ACS102-6T1-TR 32 10
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    Flip Electronics LS1026AXN8MQA

    IC MPU QORIQ 1.2GHZ 780FCPBGA
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    DigiKey LS1026AXN8MQA Tray 532 10
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    JRH Electronics G9588S1026NF6

    CONN
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    DigiKey G9588S1026NF6 Bulk 92 1
    • 1 $781.47
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    NXP Semiconductors LS1026ASN8P1A

    IC MPU QORIQ 1.4GHZ 780FCPBGA
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    DigiKey LS1026ASN8P1A Tray 55 1
    • 1 $90.86
    • 10 $74.933
    • 100 $74.933
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    Rochester Electronics LS1026ASN8P1A 60 1
    • 1 $78.65
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    Flip Electronics LS1026ASN8P1A 57
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    JRH Electronics G9622S1026M12

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    DigiKey G9622S1026M12 Bulk 46 1
    • 1 $783.38
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    S1026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1021R SC-75A OT-416) 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1021R SC-75A OT-416) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    7133-1

    Abstract: si1022r
    Text: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si1022R 2002/95/EC SC-75A OT-416) Si1022R-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 7133-1

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SQM110N06

    Abstract: SQM110N06-06
    Text: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQM110N06-06 AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-06-GE3 18-Jul-08 SQM110N06 SQM110N06-06

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR878DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.019 at VGS = 4.5 V 34 Qg (Typ.) 13.6 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • DC/DC Primary Side Switch


    Original     		PDF SiR878DP 2002/95/EC SiR878DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR880DP 2002/95/EC SiR880DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 18.3 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		PDF SiR882DP 2002/95/EC SiR882DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR880DP 2002/95/EC SiR880DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si1022R 2002/95/EC SC-75A OT-416) Si1022R-T1-GE3 11-Mar-11

    SI1021R

    Abstract: No abstract text available
    Text: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1021R 2002/95/EC SC-75A OT-416) 11-Mar-11

    DEVICE MARKING 03L

    Abstract: No abstract text available
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 18-Jul-08 DEVICE MARKING 03L

    Untitled

    Abstract: No abstract text available
    Text: SQM110P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120


    Original     		PDF SQM110P06-07L AEC-Q101 2002/95/EC O-263 SQM110P06-07L-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS892DN 2002/95/EC SiS892DN-T1-GE3 18-Jul-08

    71331

    Abstract: No abstract text available
    Text: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si1022R SC-75A OT-416) 2002/95/EC Si1022R-T1-GE3 18-Jul-08 71331

    Untitled

    Abstract: No abstract text available
    Text: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si7844DP 2002/95/EC Si7844DP-T1-E3 Si7844DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR880DP 2002/95/EC SiR880DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4909DY 2002/95/EC Si4909DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    EC2 WS-501

    Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
    Text: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,


    OCR Scan     		PDF 250ns 250ns. WS-20110 WS-20120 WS-20130 WS-20140 WS-20150 WS-20160 WS-201 EC2 WS-501 WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570

    Untitled

    Abstract: No abstract text available
    Text: ► S1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.


    OCR Scan     		PDF DPS1026 DPS1026 30A00602 S1026

    Untitled

    Abstract: No abstract text available
    Text: OPA6Q3 High Speed, Current-Feedback, High Voltage OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • WIDE SUPPLY RANGE: ±4.5 to ±18V • VIDEO AMPLIFIER • BANDWIDTH: 100MHz, G = 1 to 10 • PULSE AMPLIFIER • SLEW RATE: 1000V/|is • SONAR, ULTRASOUND BUFFERS


    OCR Scan     		PDF 100MHz, 150mA OPA603 150i2 17313b5

    S1026

    Abstract: No abstract text available
    Text: S1026 □PM_ _Microsystems, tnc^ Dense-Pac v 64K X 16 C M O S S R A M M O D U L E NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors


    OCR Scan     		PDF DPS1026 DPS1026 30A00602 S1026 125-C S1026