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    MEC Switches A/S 1S09-22.5

    CAP TACTILE ROUND BLACK
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    DigiKey 1S09-22.5 Bag 9,847 1
    • 1 $0.66
    • 10 $0.6
    • 100 $0.5433
    • 1000 $0.49206
    • 10000 $0.4591
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    Visual Communications Company LCS_092_CTP

    LIGHTPIPE ASSY THREADED SEALED
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    DigiKey LCS_092_CTP Bulk 1,562 1
    • 1 $4.4
    • 10 $3.015
    • 100 $2.303
    • 1000 $1.93552
    • 10000 $1.8
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    Mouser Electronics LCS_092_CTP 700
    • 1 $4.02
    • 10 $3.02
    • 100 $2.31
    • 1000 $1.92
    • 10000 $1.86
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    Essentra Components 12SWS0921

    WASHER SHOULDER NYLON
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    DigiKey 12SWS0921 Bulk 1,094 1
    • 1 $0.11
    • 10 $0.084
    • 100 $0.0652
    • 1000 $0.05253
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    Essentra Components 12SWS0926

    WASHER SHOULDER NYLON
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    DigiKey 12SWS0926 Bulk 466 1
    • 1 $0.17
    • 10 $0.13
    • 100 $0.1018
    • 1000 $0.08772
    • 10000 $0.08772
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    Sanyo-Denki Co Ltd 9S0924F401

    FAN AXIAL 92X25MM 24VDC WIRE
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    DigiKey 9S0924F401 Box 84 1
    • 1 $22.05
    • 10 $18.079
    • 100 $15.38804
    • 1000 $15.38804
    • 10000 $15.38804
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    Neutron USA 9S0924F401 50
    • 1 $78.93
    • 10 $78.93
    • 100 $78.93
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    S092 Datasheets (1)

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    ECAD Model
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    Description
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    Datasheet Type
    PDF
    S0921-46R Harwin RFI SHIELD CLIP CORNER TIN SMD Original PDF

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    transistor k 316

    Abstract: E6327 k 1094 transistor
    Text: SIPMOS Small-Signal Transistor BSP 316 ● VDS − 100 V ● ID − 0.65 A ● RDS on 2.2 Ω ● VGS(th) − 0.8 V … − 2.0 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information BSP 316 Q67000-S092 Pin Configuration


    Original     		Q67000-S092 E6327: OT-223 transistor k 316 E6327 k 1094 transistor PDF

    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410 PDF

    95xxx

    Abstract: si3434 si3495
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495 PDF

    SI7288

    Abstract: No abstract text available
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288 PDF

    Si2333CDS

    Abstract: Si2333CDS-T1-GE3 Si2333C
    Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si2333CDS 2002/95/EC O-236 OT-23) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 11-Mar-11 Si2333C PDF

    R 2561

    Abstract: DG403DJ DG403 DG403DY-T1-E3 DG401 DG405 DG405DJ DG405DY DG405DY-T1 DG403DY-E3
    Text: DG401, DG403, DG405 Vishay Siliconix Low-Power, High-Speed CMOS Analog Switches DESCRIPTION FEATURES The DG401, DG403, DG405 monolithic analog switches were designed to provide precision, high performance switching of analog signals. Combining low power 0.35 µW,


    Original     		DG401, DG403, DG405 DG405 DG401 11-Mar-11 R 2561 DG403DJ DG403 DG403DY-T1-E3 DG405DJ DG405DY DG405DY-T1 DG403DY-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiHP22N60S-E3

    Abstract: SiHP22N60S
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08 PDF

    Si3853DV

    Abstract: Si3853DV-T1-E3 Si3853DV-T1-GE3
    Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus


    Original     		Si3853DV 2002/95/EC Si3853DV-T1-E3 Si3853DV-T1-GE3 18-Jul-08 PDF

    SiA425EDJ

    Abstract: bmx - 01 SiA425EDJ-T1-GE3
    Text: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21


    Original     		SiA425EDJ SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08 bmx - 01 SiA425EDJ-T1-GE3 PDF

    Si9731

    Abstract: Si9731DB Si9731DQ TSSOP-16
    Text: Si9731 Vishay Siliconix µP Controlled Battery Charger for 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries DESCRIPTION FEATURES Si9731 is a chemistry independent battery charger designed to pulse charge 1-cell to 3-cell NiCd/NiMH or 1-cell Li-ion batteries. Battery charging is accomplished under direct


    Original     		Si9731 Si9731 18-Jul-08 Si9731DB Si9731DQ TSSOP-16 PDF

    Si3951DV-T1-GE3

    Abstract: Si3951DV Si3951DV-T1-E3
    Text: Si3951DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3951DV 2002/95/EC Si3951DV-T1-E3 Si3951DV-T1-GE3 18-Jul-08 PDF

    SUP40P10-43

    Abstract: 4600 mosfet inverter SUP40P10-43-GE3
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 18-Jul-08 SUP40P10-43 4600 mosfet inverter SUP40P10-43-GE3 PDF

    SC-75

    Abstract: No abstract text available
    Text: New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-75


    Original     		SMMB912DK SC-75 2002/95/EC SC75-6L-Dual 18-Jul-08 SC-75 PDF

    SMM2302CDS

    Abstract: SMM2302CDS-T1-GE3 Vishay Medical
    Text: SMM2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.075 ID (A) • Halogen-free According to IEC 61249-2-21


    Original     		SMM2302CDS 2002/95/EC O-236 OT-23) 18-Jul-08 SMM2302CDS SMM2302CDS-T1-GE3 Vishay Medical PDF

    Si4487DY-T1-GE3

    Abstract: si4487 65473
    Text: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4487DY 2002/95/EC Si4487DY-T1-GE3 18-Jul-08 si4487 65473 PDF

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08 PDF

    SQJ463EP-T1-GE3

    Abstract: SQJ463 SQJ463EP NC2030
    Text: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 11 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21


    Original     		SQJ463EP 2002/95/EC AEC-Q101 SQJ463EP-T1-GE3 18-Jul-08 SQJ463EP-T1-GE3 SQJ463 SQJ463EP NC2030 PDF

    Si3451DV-T1-E3

    Abstract: 80pf55 Si3451
    Text: Si3451DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3451DV 2002/95/EC Si3451DV-T1-E3 Si3451DV-T1-GE3 18-Jul-08 80pf55 Si3451 PDF

    SQ2360EES

    Abstract: SQ2360EES-T1-GE3
    Text: SQ2360EES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		SQ2360EES 2002/95/EC AEC-Q101 O-236 OT-23) OT-23 SQ2360Electual 18-Jul-08 SQ2360EES SQ2360EES-T1-GE3 PDF

    si4829

    Abstract: No abstract text available
    Text: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829 PDF

    65176

    Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		SiA519EDJ 2002/95/EC SC-70-6 18-Jul-08 65176 SiA519EDJ-T1-GE3 PDF