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    Bimba Manufacturing Company FS-090.394

    Cylinder, Square Flat-1 series | Bimba FS-090.394
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    RS FS-090.394 Bulk 5 Weeks 1
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    Bimba Manufacturing Company FOS-090.394

    Cylinder, Flat-I, Sgl Act, 1-1/16In Bore ; Stroke: 0.394 Inch(s) | Bimba FOS-090.394
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    RS FOS-090.394 Bulk 5 Weeks 1
    • 1 $92.05
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    Bimba Manufacturing Company FS-090.39-GYEE3

    Cylinder, Square Flat-1 series | Bimba FS-090.39-GYEE3
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    RS FS-090.39-GYEE3 Bulk 5 Weeks 1
    • 1 $123.16
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    Bimba Manufacturing Company FOS-090.394-4FMTV

    Cylinder, Flat-I, Sgl Act, 1-1/16In ; Stroke: 0.394 Inch(s); Screw Clearance Ho | Bimba FOS-090.394-4FMTV
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    RS FOS-090.394-4FMTV Bulk 5 Weeks 1
    • 1 $108.45
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    S09039 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4559ADY

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		PDF Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4559

    Abstract: SI4559ADY-T1-E3 Si4559ADY
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		PDF Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 11-Mar-11 si4559

    Si4532ADY

    Abstract: Si4532ADY-T1-E3 N- and P-Channel 30-V D-S MOSFET
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4532ADY Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11 N- and P-Channel 30-V D-S MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Si4388DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V ID (A)a Qg (Typ.) 10.7


    Original     		PDF Si4388DY Si4388DY-T1-E3 Si4388DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S09039

    Abstract: S09040 40152 2505121
    Text: IMR 25.40 Series 25.40 Watt DC-DC Converters Input voltage range up to 72 V DC 1, 2 or 3 outputs up to 30 V DC 1500 V DC I/O electric strength test voltage • Low cost • Short circuit protection • Efficiency up to 82% Selection chart Output 1 Output 2


    Original     		PDF S09039 S09040 S09039 S09040 40152 2505121

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4567DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 N-Channel - 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 0.085 at VGS = - 10 V - 4.4 0.122 at VGS = - 4.5 V - 3.7 Qg (Typ.)


    Original     		PDF Si4567DY Si4567DY-T1-E3 Si4567DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4569DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = - 10 V - 6.0 0.039 at VGS = - 4.5 V - 4.9


    Original     		PDF Si4569DY Si4569DY-T1-E3 Si4569DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4346DY

    Abstract: Si4346DY-T1-E3 Si4346DY-T1-GE3
    Text: Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.023 at VGS = 10 V 8 0.025 at VGS = 4.5 V 7.5 0.030 at VGS = 3.0 V 6.8 0.036 at VGS = 2.5 V 6.0 Qg (Typ.) 6.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4346DY Si4346DY-T1-E3 Si4346DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4778DY Si4778DY-T1-E3 Si4778DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4778DY Si4778DY-T1-E3 Si4778DY-T1-GE3 11-Mar-11

    SI4803

    Abstract: Si4803DY
    Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		PDF Si4803DY Si4803DY-T1-E3 Si4803DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4803

    si4124

    Abstract: No abstract text available
    Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4124DY Si4124DY-T1-E3 Si4124DY-T1-GE3 18-Jul-08 si4124

    Si4532ADY-T1-E3

    Abstract: Si4532ADY
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4532ADY Si4532ADY-T1-E3 Si4532ADY-T1-GE3 18-Jul-08

    SI4455DY-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4455DY Si4455DY-T1-E3 Si4455DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY Si4816BDY-T1-E3 Si4816BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4831BDY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.042 at VGS = - 10 V - 6.6 0.065 at VGS = - 4.5 V - 5.3 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4831BDY Si4831BDY-T1-E3 Si4831BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		PDF Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 11-Mar-11

    SI-4102

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 11-Mar-11 SI-4102

    Untitled

    Abstract: No abstract text available
    Text: DG2747, DG2748, DG2749 Vishay Siliconix 0.4-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2747, DG2748, and DG2749 are high performance, low on-resistance analog switches of dual SPST configuration. Built on Vishay Siliconix's sub-micro CMOS technology, the


    Original     		PDF DG2747, DG2748, DG2749 DG2749 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: Si4831BDY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.042 at VGS = - 10 V - 6.6 0.065 at VGS = - 4.5 V - 5.3 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4831BDY Si4831BDY-T1-E3 Si4831BDY-T1-GE3 11-Mar-11