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    Vox Power Ltd NEVO-600S-0323-DK000

    AC/DC CONVERTER 24V 12V 24V 450W
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    DigiKey NEVO-600S-0323-DK000 Box 15
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    Samtec Inc FFSD-07-S-03.23-01-S-N

    .050 X .050 C.L. FEMALE IDC ASSE
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    DigiKey FFSD-07-S-03.23-01-S-N Bulk 1
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    Avnet Americas FFSD-07-S-03.23-01-S-N Bulk 1
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    Mouser Electronics FFSD-07-S-03.23-01-S-N
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    Newark FFSD-07-S-03.23-01-S-N Bulk 1
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    Master Electronics FFSD-07-S-03.23-01-S-N
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    Sager FFSD-07-S-03.23-01-S-N 1
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    Samtec Inc 6QDPS-032-30.0-TTR-TED-5

    0.635 MM Q2 SHIELDED HIGH-SPEED
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    Samtec Inc 6QDPS-032-39.4-TBR-SBL-5-B

    0.635 MM Q2 SHIELDED HIGH-SPEED
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    Western Digital Corp 0S03236

    H3B100072BKNA1TRP - Bulk (Alt: 0S03236)
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    S0323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6116 CMOS RAM

    Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
    Text: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns


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    PDF IDT71V428S IDT71V428L 10/12/15ns 32-pin, IDT71V428 304-bit x4033 6116 CMOS RAM 6116 static RAM chip 71V428 IDT71V428L IDT71V428S

    SO32-3

    Abstract: IDT71024 IDT71024S70 S0323
    Text: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible


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    PDF IDT71024S70 IDT71024 576-bit 200mV 300-mil SO32-2) 400-mil SO32-3) SO32-3 IDT71024S70 S0323

    Untitled

    Abstract: No abstract text available
    Text: ADS61B23 w w w .t i.c om SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


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    PDF ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit

    IDT71128

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


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    PDF IDT71128 12/15/20ns 32-pin IDT71128 576-bit 200mV 400-mil SO32-3)

    ADS612X

    Abstract: ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX
    Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


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    PDF ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit ADS612X ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX

    Honeywell M6531A1007

    Abstract: honeywell M7535A1001 TP939B1002 honeywell ml7420a3006 T7412A1018 C7085A1006 MT4-230-NC T7460B1009 Delta Electronics dps 730 T7414A1019
    Text: Field Devices A L L Y O U N E E D I N H VAC C ON TR OL INCLUDED Product Catalog 2013 Documentation on CD QR Codes Actuators 13 Valves linear 33 Valves rotary 86 Frequency inverters 99 Sensors 110 Thermostats 152 Pneumatic Products 162 Miscellaneous 174 Old products


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    PDF 20/38mm Honeywell M6531A1007 honeywell M7535A1001 TP939B1002 honeywell ml7420a3006 T7412A1018 C7085A1006 MT4-230-NC T7460B1009 Delta Electronics dps 730 T7414A1019

    IDT71124

    Abstract: 71124s12
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


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    PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) 71124s12

    IDT71128

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times


    Original
    PDF IDT71128 12/15/20ns 32-pin IDT71128 576-bit 200mV 400-mil SO32-3)

    Untitled

    Abstract: No abstract text available
    Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


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    PDF ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns


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    PDF IDT71V428S IDT71V428L 10/12/15ns 32-pin, IDT71V428 304-bit PDN-SR-0607.

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


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    PDF IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s


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    PDF IDT71024 7/20n MIL-STD-883, L32-2) 300-mil S032-2) 400-mil S032-3) 4A25771

    s0324

    Abstract: No abstract text available
    Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.


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    PDF IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 71V124 400-mil S032-3) s0324

    y 4m

    Abstract: 641BL
    Text: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign


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    PDF IDT71024 300-mil 400-m MIL-STD-883, L32-2) y 4m 641BL

    CHN 920

    Abstract: 71024S15 chn 830
    Text: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options


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    PDF 128Kx IDT71024 15/17/20/25ns 15/20ns 12/15/17/20ns IL-STD-883, T71024 576-bit MS-027, CHN 920 71024S15 chn 830

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times


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    PDF IDT71V428 12/15/20ns 32-pin, IDT71V428 304-bit drw02 71V428 400-mil S032-3)

    S0323

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device


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    PDF IDT713024SL 20/25ns S0323

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71024 Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • Equal access and cycle tim es — M ilitary: 20/25ns — C om m ercial: 15 /17ns


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    PDF 128Kx IDT71024 20/25ns /17ns 32-pin T71024 576-bit 400-m D32-2)

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


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    PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit MO-061, S5771

    S0323

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


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    PDF 9/10/12/15/20ns 32-pin 400-mil 32pin IDT71V124SA IDT71V124 576-bit 200mV 71V124 300-mil S0323

    S0323

    Abstract: IDT71024S70 K 3568
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible


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    PDF IDT71024S70 T71024 576-bit MO-061, S5771 S0323 IDT71024S70 K 3568

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT IDT71024 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM OS Static RAM • Equal access and cycle tim es — Military: 17/20/25ns — Com m ercial: 15/17/20ns _ • Two Chip Selects plus one O utput Enable (OE) pin


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    PDF 128KX IDT71024 17/20/25ns 15/17/20ns 32-pin 400mil IL-STD-883, IDT71024 576-bit MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT71V128 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


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    PDF 12/15/20ns 32-pin IDT71V128 IDT71V128 576-bit 200mV 71V128 400-mil SQ32-3)

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 ad v a n c e d h ig h -s p e e d C M O S s ta tic RAM • E qual a cc e s s and cycle tim e s — M ilitary: 1 5 /1 7/2 0/25 ns — C o m m e rc ia l: 1 2 /1 5 /1 7/2 0ns


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    PDF 128Kx IDT71024 IDT71024 MIL-STD-883, 400-mil D32-2) P32-3) L32-2) 300-mil