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    71124S12 Search Results

    71124S12 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    71124S12YG Renesas Electronics Corporation 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Visit Renesas Electronics Corporation
    71124S12YG8 Renesas Electronics Corporation 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Visit Renesas Electronics Corporation
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    71124S12 Price and Stock

    Renesas Electronics Corporation 71124S12YG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation 71124S12YG8

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation IDT71124S12Y

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation IDT71124S12YI

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    Renesas Electronics Corporation IDT71124S12Y8

    IC SRAM 1MBIT PARALLEL 32SOJ
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    71124S12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    71124S12YG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71124S12YG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF

    71124S12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    71124

    Abstract: 71124S
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71124 IDT71124 576-bit x4033 71124 71124S

    IDT71124

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71124 IDT71124 576-bit

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    IDT71124

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3)

    Untitled

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF 12/15/20ns 32-pin IDT71124 IDT71124 576-bit x4033

    71016S20PHG8

    Abstract: 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08R1 29-Apr-2010 Last Buy Deadline for Submission of Order:


    Original     		PDF SR-09-08R1 29-Apr-2010 26-Jul-2010 25-Oct-2010 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71V424YS10PHI 71016S20PHG8 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG

    71256-sa15y

    Abstract: 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08 Last Buy Deadline for Submission of Order:


    Original     		PDF SR-09-08 31-Jan-2010 31-Jan-2011 30-Apr-2011 Fa024 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71256-sa15y 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI

    IDT71124

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71124 IDT71124 576-bit

    IDT71124

    Abstract: SO32-3
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71124 IDT71124 576-bit x4033 SO32-3

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		PDF CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309

    IDT71124

    Abstract: 71124s12
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) 71124s12

    Untitled

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF 12/15/20ns 32-pin IDT71124 IDT71124 576-bit x4033

    IDT71124

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71124 IDT71124 576-bit 400-mil SO32-3)

    Untitled

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial: 12/15/20ns


    Original     		PDF IDT71124 12/15/20ns 15/20ns 32-pin IDT71124 576-bit

    EPM5128LC

    Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C


    Original     		PDF 5962-8753903LX 5962-8863701LX 5962-8867003LX 5962-8867809RX 5962-8867809XX 5962-8867810RX 5962-8867811RX 5962-8867812RX 5962-8871309RX 5962-8871310RX EPM5128LC EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1

    IDT71124

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial and Industrial: 12/15/20ns


    Original     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit x4033

    71124

    Abstract: IDT71124 c/mbg 3514
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) 71124 c/mbg 3514

    71124S15

    Abstract: No abstract text available
    Text: IDT71124 CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial: 12/15/20ns


    Original     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) x4033 71124S15

    Untitled

    Abstract: No abstract text available
    Text: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Fe a t ure s ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times


    Original     		PDF IDT71124 12/15/20ns 15/20ns 32-pin IDT71124 576-bit

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


    OCR Scan     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit MO-061, S5771

    s0324

    Abstract: land pattern for TSOP idt IDT land pattern tsop 6
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


    OCR Scan     		PDF IDT71124 12/15/20ns 32-pin 576-bit MO-061, PSC-4033 s0324 land pattern for TSOP idt IDT land pattern tsop 6

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g rate d D e vic e Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JE D E C revolutionary pinout (center pow er/G N D ) for


    OCR Scan     		PDF 128Kx IDT71124 12/15/20ns 32-pin 576-bit 200mV 2S771

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT jdt) PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.


    OCR Scan     		PDF IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 2S771 400-mil 5S771