MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
175oC
MUR8100
RURP8100
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MU8100
Abstract: No abstract text available
Text: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MU8100
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MU8100
Abstract: MUR8100E MU810 RUR8100
Text: MUR8100E, RURP8100 March 2001 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The RUR8100 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of switching
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MUR8100E,
RURP8100
RUR8100
MUR8100E
RURP8100
O-220AC
MU8100
MU810
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Untitled
Abstract: No abstract text available
Text: MUR8100E, RURP8100 November 2013 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching
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MUR8100E,
RURP8100
RUR8100
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MUR8100
RURP8100
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MU8100
Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Text: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MU8100
200a gto preliminary
RURP8100
100a 1000v GTO
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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MUR8100E,
RURP8100
MUR8100E
RUR8100
175oC
MUR8100
RURP8100
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RURP8100CC
Abstract: No abstract text available
Text: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted
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RURP8100CC
RURP8100CC
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120ET3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
Diode 1N4007 DO-7 Rectifier Diode
FE8D
marking BCV
BA157* diode
MUR160 SMa
diode rgp10g
MBRD360
cathode top 1n5619
1N2069
mur120 equivalent diode
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1334 diode
Abstract: RURP880CC RURP8100CC RURP870CC RURP890CC
Text: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <85ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RURP870CC,
RURP880CC,
RURP890CC,
RURP8100CC
O-220AB
RURP890CC
RURP8100CC
1-800-4-HARRIS
1334 diode
RURP880CC
RURP870CC
RURP890CC
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RURP8100CC
Abstract: IGBT 1000V .200A
Text: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP8100CC
RURP8100CC
175oC
IGBT 1000V .200A
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CTX12S
Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40
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SMBYW01-200
16CPF20
BYW99W-200
10BF100
STTA112U
16CTQ100
STPS20H100CT
10BF20
16CTQ100S
CTX12S
CTX12SL
CTX-12SL
CTB34M
FMPG3F
BYV10-40 equivalent
BAT42 equivalent
STPS3045CW Equivalent
BYV42-200
CTL22S
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RURP880
Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
Text: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature
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MUR870E,
MUR880E,
MUR890E,
MUR8100E,
RURP870,
RURP880,
RURP890,
RURP8100
O-220AC
RURP880
MUR890
MUR870E
MUR870
MUR890E
RUR880
MUR880E
MUR880
MUR8100E
RUR870
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CTX12S
Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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SGRECT/0802
CTX12S
CTX12SL
BYV255-200
W210PIV400
SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT
smd schottky diode A2 SOD-123
BYV10-40 PSpice
W210PIV-400
shottky barrier diode 100V 100A
BYV52-200 equivalent
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RUR820
Abstract: RUR815 MUR820 MUR810 MUR815 RUR810 M302271 RUR-820
Text: HARRIS SEMICOND SECTOR 00«372 7 H -HAS M UR810 M UR81S MUR820 RUR810 RUR815 RUR820 8A High-Speed, High-Efficiency Epitaxial Silicon Rectifiers -F05-I5 August 1991 Features Package T0 -22 0A C TOP VIEW • Ultrafast Recovery Time trr < 35ns
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MUR810
q042372
MUR815
RUR815
100kHz
MUR810,
MUR815,
MUR820
RUR810,
RUR815,
RUR820
RUR815
RUR810
M302271
RUR-820
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RUR8100
Abstract: MUR8100 MUR8100E RURP8100
Text: MUR8100E, RURP8100 in te rd i Data Sheet Ja nu a ry 2000 File N u m b e r 2 7 8 0 .4 8A, 1000V Ultra fast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes • Ultrafast with Soft Recovery .<75ns • Operating Temperature. 175°C
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MUR8100E,
RURP8100
MUR8100E
RUR8100
TA09617.
Q104b7b
MUR8100
RURP8100
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Diode MUR880E
Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
Text: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic
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MUR870E,
MUR880E,
MUR890E
MUR8100E,
RUR870,
RUR880
43Q2271
0G42377
RUR890,
RUR8100
Diode MUR880E
RUR880
RUR8100
MUR870E
MUR8100E
MUR880E
RUR870
RUR890
LF 1A
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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OCR Scan
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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OCR Scan
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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RURP880CC
Abstract: No abstract text available
Text: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S em iconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Package Features • Ultrafast with Soft Recovery. <85ns JEDEC TO-220AB • Operating
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OCR Scan
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PDF
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RURP870CC,
RURP880CC,
RURP890CC,
RURP8100CC
O-220AB
O-220AB
RURP880CC
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BYT01-200
Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
Text: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600
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OCR Scan
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1N4942
1N4942GP
1N4944
1N4944GP
1N4946
1N4946GP
1N4947
1N4947GP
1N4948
1N4948GP
BYT01-200
UF54002
RS8KT
BYT30P800
MR918
UF54004
PLR818
BYW99P-150
BYW100-100
1N4946 cross reference
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