HEL-700
Abstract: 60X10
Text: Temperature Sensors HEL-700 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 CONSTANTS -1 Alpha, α (°C ) Delta, δ (°C)
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HEL-700
BT2-100CT3
81x10-3
02x10-7
908x10-3
775x10-7
183x10
EL-700
60X10
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HEL-700
Abstract: "temperature Sensors" rtd with wheatstone bridge- temperature EL-700
Text: Temperature Sensors HEL-700 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 CONSTANTS -1 Alpha, α (°C ) Delta, δ (°C)
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HEL-700
BT2-100CT3
81x10-3
02x10-7
908x10-3
775x10-7
183x10
EL-700
"temperature Sensors"
rtd with wheatstone bridge- temperature
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HEL-775-A
Abstract: HEL-775-B temperature sensors 10k
Text: Temperature Sensors HEL-775 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 ACCURACY VS TEMPERATURE EL-700 platinum RTDs are available in two base
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HEL-775
BT2-100CT3
EL-700
81x10-3
02x10-7
908x10-3
775x10-7
HEL-775-A
HEL-775-B
temperature sensors 10k
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rtd with wheatstone bridge- temperature
Abstract: rtd with wheatstone bridge "Temperature Sensors" HRTS-5760-B
Text: Temperature Sensors HRTS Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 PLATINUM RTDs ACCURACY VS TEMPERATURE HRTS platinum RTDs are available in two base resistance trim tolerances: ±0.2% or ±0.1%. The corresponding resistance interchangeability and temperature
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BT2-100CT3
81x10-3
02x10-7
908x10-3
775x10-7
rtd with wheatstone bridge- temperature
rtd with wheatstone bridge
"Temperature Sensors"
HRTS-5760-B
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SSG70D60
Abstract: SSG70C60 SSG70C100 SSG70c50 SSG70C30 SSG70C SSG70C80 SSG70C120 SSG70C20 SSG70C40
Text: -119n a m I j f l l H SSG 70C « SA T-9 70A c z. 9 V ' - vm - f- rt) ie V tm sd ^ SSG 70C 20 SSG 70C 30 SSG 70C 40 SSG 70C 50 SSG 70C 60 SSG 70C 80 SSG 70C 100 SSG 70C 120 200 300 400 500 600 800 1000 1200 ¥ ÍÍL I n rm s ) ¡GM Tj = I t m = 100A 1 .5
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-119-namÂ
SSG70C
SSG70C20
SSG70C30
SSG70C40
SSG70C50
SSG70C60
SSG70C80
SSG70C100
SSG70C120
SSG70D60
SSG70C120
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Untitled
Abstract: No abstract text available
Text: i N AF1ER P H I L I P S / D I S C R E T E U C V C LU riV IC IN I 2 5E D bt.53T31 0 Q 2 2 4 5 3 U r t I rt 4 m BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. 7 ^ 6 3 -/ 9 J K. ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES
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53T31
BYR34
0D334tiS
T-03-19
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b lE bbSBTBl D0271fl4 041 H A P X II BT136F SERIES P FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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D0271fl4
BT136F
OT-186
BT136Fâ
10Typical
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CAD-50
Abstract: CAD50 CA-D50-24F-44 CA-D20R CA-D10R-24B-10 24c44 CA-D20-24C-44 CA-D10-24B-44 CA-D10-24C-44 CA-D14-24C-44
Text: bTE D C I R C UI T A S S E M B L Y CORP • 5 1 3 3 75 8 O O O I R O B 214 H C A C fiyi-c^vr .24 ±.008 [ 6 . ! ±0.20] .10 0 STRIP HEADER [ 2.54 J Features For additional sizes and configurations not listed, refer to pages 42 thru 45 of this catalog Available in straight and right
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UL94V-0
150/j
E9598I
HC-44
CA-D34R-24F-10
CA-D34-24B-44
CA-D34R-24B-10
CA-D40-24C-44
R-24C-10
CA-D40-24F-44
CAD-50
CAD50
CA-D50-24F-44
CA-D20R
CA-D10R-24B-10
24c44
CA-D20-24C-44
CA-D10-24B-44
CA-D10-24C-44
CA-D14-24C-44
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D • btS3T31 0022317 7 ■ Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to base plate : BY249—300 and BY249—600.
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btS3T31
O-220
BY249â
O-220AC
bbS3T31
QQ5H331
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BT138F
Abstract: TRIAC BT138F TLC 555
Text: PHILIPS INTERNATIONAL b SE ]> • 711GÛ2L. D G L 2 2 R S bS'i « P H I N BT138F SERIES J FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended for use in applications requiring high bidirectional transient and blocking
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L22R5
BT138F
OT-186
BT138Fâ
TRIAC BT138F
TLC 555
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Untitled
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE b'lE D • bbS3^31 Q05723D 851 H A P X BT138F SERIES J V FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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Q05723D
BT138F
OT-186
BT138Fâ
D2733
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m861
Abstract: BT145 BT145-500R MS SERIES 600R 800R
Text: BT145 SERIES _ THYRISTORS Glass-passivated 25 ampere thyristors intended fo r use in applications involving high fatigue stress due to thermal cycling arid repeated switching. These thyristors feature a high surge current capability. Typical applications include m otor and heating control, regulators fo r transfomerless
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BT145
BT145-500R
220AB
m86-1160/y
m861
MS SERIES
600R
800R
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IGBT module FZ 1200
Abstract: IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200
Text: IG BT-Mod ule IGBT modules Modules IGBT Typ Type V CES lc V A R ,h jc DC pro Zweig per arm par bras tv, max IS ° C /W °c 0: 0,088 0.089 ICRM v CEsat Ion ts tf i ms tv| = 25 °C, typ. lv| = 25 “C, typ. t»,= 2 5 °C, typ tv, 25 °C, typ A V us US Maßbild
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150R06KL
3403EeJ7
IGBT module FZ 1200
IGBT FZ 200
IGBT module FZ 400
FZ 800 R12 KF1
IGBT FZ 800
IGBT FZ 1200 kf1
IGBT FZ 1200
IGBT FZ 600
IGBT FZ 1000
RT200
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T34 rectifier
Abstract: No abstract text available
Text: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and
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DDEbT13
1N5059
7Z88032
bb53531
002b51fl
002b515
T34 rectifier
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30N60
Abstract: 30N60 220 bt 109 transistor w30n60 Transistor motorola 418 gw 348
Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 30N 60 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced
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MGW30N60/D
30N60
30N60 220
bt 109 transistor
w30n60
Transistor motorola 418
gw 348
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triac BT 137
Abstract: BT137 BT137 application note BT137 Series E BT 137 triac triac BT137 btb 137 BT137-500D TRIAC TAG 137 triac BT 137 800
Text: N AUER PHILIPS/D I S C R E T E bTE T> m bb53= 31 □ □ E 7 1 cîti flb3 M A P X BT137 SERIES TRIACS Glass-passivated 8 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal
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BT137
triac BT 137
BT137 application note
BT137 Series E
BT 137 triac
triac BT137
btb 137
BT137-500D
TRIAC TAG 137
triac BT 137 800
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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bbS3T31
BT137F
OT-186
BT137Fâ
M2425
002721b
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53^31 QD27242 573 • IAPX BT139 SERIES b*1E D L TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,
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QD27242
BT139
off-sta10
D0272S1
BT139F
bb53T31
0D272S2
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PDF
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FS15R06KF2
Abstract: FZ 300 R 06 KL triphase
Text: IG BT-Mod ule IGBT modules Modules IGBT Typ b VcES IcRM v CEsat ton tf 1« Type V A 'p = 1 ms tv,= tv,= tvj = tv, 25 °C, typ 25 °C, typ 25 °C, typ. 25 °C, typ. A V IS US MS RthJC DC pro Zweig per arm par bras tvj max °C/W °c M aßbild O utline Dimension
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400R06KL2
R12KLT
34D32CI7
FS15R06KF2
FZ 300 R 06 KL
triphase
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MJ 6810
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGY40N60 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced
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MGY40N60/D
MJ 6810
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al 60 dv 2425
Abstract: No abstract text available
Text: hSE B PHILIPS INTERNATIONAL • 711GÖSb DGbSSMT 7 7 CJ H P H I N BT136F SERIES FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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BT136F
OT-186
BT136F--500
D8573
al 60 dv 2425
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TRIAC BT 136
Abstract: BT 136 TRIAC BT136 working triac bt136 temperature control by triac BT136 triac bt 135 bt136 triac TRIAC TAG 90 BT136 motor BT136 application note
Text: PHILIPS INTERNATIONAL bSE ]> • 711Da2b 00bS23ö ^ 3 «PHIN BT136 SERIES y V. TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal
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711Da2b
00bS23Ã
BT136
BT136-500
711005b
00b224Ã
M1644
BT136F
D8573
TRIAC BT 136
BT 136 TRIAC
working triac bt136
temperature control by triac BT136
triac bt 135
bt136 triac
TRIAC TAG 90
BT136 motor
BT136 application note
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Untitled
Abstract: No abstract text available
Text: IG BT-Mod ule IGBT modules Modules IGBT Typ Type b VcES V A IcRM v CEsat ton 1« tf 'p = 1 ms tv,= 25 °C, typ tv,= 25 °C, typ tvj = 25 °C, typ. tv, 25 °C, typ. A V MS MS MS RthJC DC p ro Zweig per arm par bras Ivj max ° C /W °c Maßbild Outline D im ension
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400R06KL2
R12KLT
34D32CI7
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fz 300 r 12 kf2
Abstract: F 300 R 1200 KF
Text: IG BT-Mod ule IGBT modules Modules IGBT Typ Type b VcES V A IcRM v CEsat ton 1« tf 'p = 1 ms tv,= 25 °C, typ tv,= 25 °C, typ tvj = 25 °C, typ. tv, 25 °C, typ. A V MS MS MS RthJC DC p ro Zweig per arm par bras Ivj max ° C /W °c Maßbild Outline D im ension
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400R06KL2
R12KLT
34D32CI7
fz 300 r 12 kf2
F 300 R 1200 KF
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