RSL clock generator
Abstract: DL-0035-00 direct rdram
Text: ADVANCE INFORMATION Direct Rambus RIMM™ Module 128 MBytes 64M x 16/18 RAMBUS Overview System Applications The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory,
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DL0054-00
RSL clock generator
DL-0035-00
direct rdram
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intel MOTHERBOARD pcb layout guide
Abstract: 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A
Text: R Intel 860 Chipset Memory Expansion Card MEC Design Guide May 2001 Document Number: 298302-001 R ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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3I1021
intel MOTHERBOARD pcb layout guide
1553 stub repeater
intel Chipset CRB Schematics
intel 860
pcb layout guide differential ohms stackup
2N3904
82803AA
MMBT3904LT1
PC800
SN74LVC07A
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2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
b72 voltage regulator
marking A93
A75 marking code
marking a86
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a80 marking code
Abstract: MN18R3268AF0-CM8 marking A97 b72 voltage regulator marking A99 marking b88 marking code B38 MARKING CODE B82 B100 MN18R3268AF0
Text: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2002) 288Mbit D-die NexMod Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MN18R3268AF0
288Mbit
32Mx18)
576Mb
32K/32ms
a80 marking code
MN18R3268AF0-CM8
marking A97
b72 voltage regulator
marking A99
marking b88
marking code B38
MARKING CODE B82
B100
MN18R3268AF0
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Regulator marking code A30
Abstract: No abstract text available
Text: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2003) 288Mbit D-die NexMod TM Module Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MN18R3268AF0
288Mbit
32Mx18)
576Mb
32K/32ms
Regulator marking code A30
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marking code b84
Abstract: No abstract text available
Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary
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MN18R1624
MP18R1624
288Mbit
marking code b84
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B83 004
Abstract: marking a86 b72 voltage regulator
Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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MN18R162
MP18R162
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
B83 004
marking a86
b72 voltage regulator
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marking a86
Abstract: No abstract text available
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
marking a86
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200-ball
Abstract: A79 marking code MN18R1628EF0 samsung resitor
Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MN18R1624
MP18R1624
288Mbit
16Mx18)
288Mb
16K/32ms
200-ball
A79 marking code
MN18R1628EF0
samsung resitor
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82803AA
Abstract: No abstract text available
Text: R Intel 82803AA Memory Repeater Hub for RDRAM MRH-R Datasheet August 2000 Order Number: 298022 - 002 82803AA MRH-R R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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82803AA
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SPDW
Abstract: 3TTR 29802* intel y2w12 82840 mch 82803aa
Text: R Intel 82803AA Memory Repeater Hub for RDRAM MRH-R Datasheet February 2000 Order Number: 298022 - 001 82803AA MRH-R R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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82803AA
SPDW
3TTR
29802* intel
y2w12
82840 mch
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rosan
Abstract: No abstract text available
Text: TOSHIBA THMR1E4-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-W ORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E4 is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.
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432-WORD
18-BIT
18-bit
TC59RM718MB
32M-wordXl8
600MHz
16cycles)
32M-wordX18
711MHz
rosan
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MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.
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THMR1E16-6/-7/-8
128M-word
600MHz
711MHz
800MHz
16cydes)
-16CSP
MIG toshiba
ABB B45
THMR1E16-6
THMR1E16-7
B75 ABB
hiab
837 B34
toshiba mig
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DGA4
Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
Text: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2
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432-WORD
16-BIT
16-bit
TC59RM816MB
32M-wordXl6
32M-word
600MHz
711MHz
DGA4
loqb
47KQ
B23A
B85A
Toshiba Rambus IC
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ABB B45
Abstract: No abstract text available
Text: TOSHIBA TH M R2 N4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-W ORD BY 16-BIT 128M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N4Z is a 67,108,864-word by 16-bit direct rambus dynamic RAM module consisting of 4
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864-WORD
16-BIT
16-bit
TC59RM816MB
64M-wordXl6
64M-wordX16
600MHz_
711MHz_
ABB B45
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THMRL
Abstract: R0086 toshiba a75 836 B34 toshiba a59
Text: TOSHIBA THMR1E4E-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 3 3 ,5 5 4 ,4 3 2 -W O R D B Y 18 -B IT 64M B ytes D ire ct R am b u s D R A M M O D U L E DESCRIPTION The THMR1E4E is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 4
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432-WORD
18-BIT
18-bit
TC59RM718MB
32M-wordXl8
600MHz
32M-wordX18
711MHz
THMRL
R0086
toshiba a75
836 B34
toshiba a59
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B8A10
Abstract: SS7 TOSHIBA r1e 124 9696H
Text: TOSHIBA THMR1E8E-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-W ORD BY 18-BIT 128M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR1E8E is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.
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864-WORD
18-BIT
18-bit
TC59RM718MB
64M-word
64M-wordXl8
600MHz
711MHz
B8A10
SS7 TOSHIBA
r1e 124
9696H
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Untitled
Abstract: No abstract text available
Text: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.
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THMR2N16-6/-7/-8
456-WORD
16-BIT
THMR2N16
TC59RM816MB
256M-word
600MHz
-16CSP
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circuit of rowa television
Abstract: toshiba b54
Text: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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432-WORD
18-BIT
18-bit
TC59RM818MB
B2M-wordX18
32M-wordX
600MHz
32M-word
711MHz
circuit of rowa television
toshiba b54
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64H40
Abstract: circuit of rowa television CM05
Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.
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728-WORD
16-BIT
16-bit
TC59RM816MB
128M-word
600MHz
128M-wordX16
711MHz
64H40
circuit of rowa television
CM05
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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108f864-WORD
18-BIT
864-word
18-bit
TC59RM818MB
64M-word
64M-wordXl8
600MHz
711MHz
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H111
Abstract: a40 5pin
Text: TOSHIBA TH M R2 E8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2E8Z is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8
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728-WORD
18-BIT
18-bit
TC59RM818MB
128M-wordXl8
600MHz
711MHz
128M-word
H111
a40 5pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M R2 E8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2E8Z is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8
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728-WORD
18-BIT
18-bit
TC59RM818MB
256MB
184pin
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