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    Panduit Corp EBV14-4MB-Q

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    Dielectric Laboratories Inc B144MB1S

    RF FILTER BAND PASS 14.5GHZ 2SMD
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    TXC Corporation 7C-6.144MBE-T

    XTAL OSC XO 6.1440MHZ CMOS SMD
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    TXC Corporation 7C-6.144MBA-T

    XTAL OSC XO 6.1440MHZ CMOS SMD
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    144MB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    144MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original PDF

    144MB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HR128E08B

    Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
    Text: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.


    Original     		128/144Mb 128Mb 144Mb HR128N08E HR128N08D HR128N08C HR128N08B HR128E08E HR128E08D HR128E08C HR128E08B HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E PDF

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


    Original     		128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845 PDF

    144MB

    Abstract: B641 High Connection Density
    Text: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


    Original     		128Mb 144Mb HS064N04E HS064N04D HS064N04C HS064N04B HS064E04E HS064E04D HS064E04C HS064E04B 144MB B641 High Connection Density PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81302T08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus


    Original     		GS81302T08/09/18/36E-375/350/333/300/250 165-Bump 165-bump, GS81302Txx PDF

    GS81302D36E-250

    Abstract: No abstract text available
    Text: GS81302D08/09/18/36E-375/350/333/300/250 144Mb SigmaQuadTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


    Original     		GS81302D08/09/18/36E-375/350/333/300/250 165-Bump 165-bump, 144Mb 81302Dxx GS81302D36E-250 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS81302T08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


    Original     		GS81302T08/09/18/36E-375/350/333/300/250 165-Bump 165-bump, 144Mb GS81302Txx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81302S08/09/18/36E-333/300/250/200/167 144Mb Burst of 2 DDR SigmaSIO-II SRAM 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 4M x 36Features • Simultaneous Read and Write SigmaSIO Interface • JEDEC-standard pinout and package


    Original     		GS81302S08/09/18/36E-333/300/250/200/167 165-Bump 36Features 165-bump, 144Mb GS866x36E-300T. 81302Sxx PDF

    TOP SIDE MARKING OF MICRON

    Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
    Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz


    Original     		128Mb/144Mb: MT6V8M16 MT6V8M18 18-bit) MT6V8M18F-3B MT6V8M18F-3C MT6V8M18F-4C 144MRDRAM TOP SIDE MARKING OF MICRON MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81302T07/10/19/37E-400/375/333/300 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR Interface


    Original     		GS81302T07/10/19/37E-400/375/333/300 165-Bump 165-bump, GS81302Txx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81302D19/37E-400/375 144Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–375 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


    Original     		GS81302D19/37E-400/375 165-Bump 165-bump, 144Mb GS81302Dx36E-400T. 81302Dxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8128418/36B-250/200/167 119-BGA Commercial Temp Industrial Temp 8M x 18,4M x 36 144Mb S/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		GS8128418/36B-250/200/167 119-BGA 144Mb x18/x36 81284xx PDF

    GS81302D36E-250

    Abstract: No abstract text available
    Text: GS81302D08/09/18/36E-375/350/333/300/250 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 144Mb SigmaQuadTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Clocking and Addressing Schemes • Simultaneous Read and Write SigmaQuad Interface


    Original     		GS81302D08/09/18/36E-375/350/333/300/250 165-Bump 165-bump, 144Mb 81302Dxx GS81302D36E-250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81302S08/09/18/36E-333/300/250/200/167 144Mb SigmaSIOTM DDR -II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaSIO Interface • JEDEC-standard pinout and package


    Original     		GS81302S08/09/18/36E-333/300/250/200/167 165-Bump 165-bump, 144Mb GS81302Sx36E-300T. 81302Sxx 165-BGA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS81284Z18/36B-xxxV 119-Bump BGA Commercial Temp Industrial Temp 144Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original     		GS81284Z18/36B-xxxV 119-Bump 119-BGA 119-chnology 144Mb 81284ZxxxV PDF

    Untitled

    Abstract: No abstract text available
    Text: GS81302R08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


    Original     		GS81302R08/09/18/36E-375/350/333/300/250 165-Bump 165-bump, 144Mb GS81302Rxx PDF

    Untitled

    Abstract: No abstract text available
    Text: GS81302T07/10/19/37E-450/400/350/333/300 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


    Original     		GS81302T07/10/19/37E-450/400/350/333/300 144Mb 165-Bump GS81302T1937 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8128418/36B-xxxV 119-Pin BGA Commercial Temp Industrial Temp 8M x 18, 4M x 36, 144Mb S/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		GS8128418/36B-xxxV 119-Pin 144Mb x18/x36 8128418/36B-xxxV 250MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: GS81302QT07/10/19/37E-318/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


    Original     		GS81302QT07/10/19/37E-318/300/250/200 144Mb 165-Bump 81302QT1937E PDF

    Untitled

    Abstract: No abstract text available
    Text: GS81302Q07/10/19/37E-318/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


    Original     		GS81302Q07/10/19/37E-318/300/250/200 144Mb 165-Bump 81302Q1937 PDF

    Floppy connector 34 pin IDC to usb

    Abstract: NE2000 port/PS-2-2000F
    Text: HAWK HAWK HAWK HAWK HAWK Supports Intel Pentium and AMD CPUs up to 233MHz MMX Up to 256MB DRAM 256 or 512KB L2 Cache COAST 0-144MB Flash options (DiskOnChip) Up to 512KB SRAM PCI Local Bus SVGA for LCD and CRT 800x600, 1024x768, 1280x1024 resolutions


    Original     		233MHz 256MB 512KB 0-144MB 800x600, 1024x768, 1280x1024 10Base-T NE2000 Floppy connector 34 pin IDC to usb port/PS-2-2000F PDF

    da53

    Abstract: DB26 KM416RD8AC KM418RD8AC
    Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary


    Original     		KM416RD8AC /KM418RD8AC 128/144Mbit da53 DB26 KM418RD8AC PDF

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8 PDF

    CQ 1265

    Abstract: AN1021
    Text: GS81302QT07/10/19/37E-333/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


    Original     		GS81302QT07/10/19/37E-333/300/250/200 144Mb 165-Bump 165-bump, GS81302QTxxE-300T. 81302QT1937E CQ 1265 AN1021 PDF

    direct rdram

    Abstract: No abstract text available
    Text: ADVANCE M l^ P n iv r I 144Mb: 8 MEG X 18 DIRECT RDRAM MT6V8M18 - 256K x 18 x 32 banks DIRECT RAMBUS c™ DRAM n o a nil For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • High-speed 300 MHz and 400 MHz clocks with 2x data


    OCR Scan     		144Mb: MT6V8M18 direct rdram PDF