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Samsung Semiconductor MN18R1628EF0-CT9
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MN18R162 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MN18R1624DF0		Samsung Electronics	16Mx18 * 4(8)pcs NexMod Module based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V		Original	PDF
MN18R1628DF0		Samsung Electronics	16Mx18 * 4(8)pcs NexMod Module based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V		Original	PDF

MN18R162 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
200-ball Abstract: A79 marking code MN18R1628EF0 samsung resitor Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004	Original	MN18R1624 MP18R1624 288Mbit 16Mx18) 288Mb 16K/32ms 200-ball A79 marking code MN18R1628EF0 samsung resitor	PDF
marking code b84 Abstract: No abstract text available Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary	Original	MN18R1624 MP18R1624 288Mbit marking code b84	PDF
B83 004 Abstract: marking a86 b72 voltage regulator Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.	Original	MN18R162 MP18R162 288Mbit 144MB 16Mx18) 288Mb 16K/32ms B83 004 marking a86 b72 voltage regulator	PDF
marking a86 Abstract: No abstract text available Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.	Original	MN18R1624 MP18R1624 288Mbit 144MB 16Mx18) 288Mb 16K/32ms marking a86	PDF
b72 voltage regulator Abstract: marking A93 A75 marking code marking a86 Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.	Original	MN18R1624 MP18R1624 288Mbit 144MB 16Mx18) 288Mb 16K/32ms b72 voltage regulator marking A93 A75 marking code marking a86	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF