Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0707S Image sensor with 128 x 128 pixels developed for two-dimensional infrared imaging The G11097-0707S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0707S
G11097-0707S
SE-171
KMIR1021E02
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roic
Abstract: defective pixel
Text: InGaAs area image sensor G11097-0707S Image sensor with 128 x 128 pixels developed for two-dimensional infrared imaging The G11097-0707S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0707S
G11097-0707S
KMIR1021E04
roic
defective pixel
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G12460-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G12460-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G12460-0606S
G12460-0606S
KMIR1023E01
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0707S Image sensor with 128 x 128 pixels developed for two-dimensional infrared imaging The G11097-0707S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0707S
G11097-0707S
KMIR1021E05
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
KMIR1016E04
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HgCdTe
Abstract: HgCdTe FPA focal plane array roic 4880 HGCDTE detector
Text: TM 1024 x 1024 HgCdTe/Al2O 3 High Speed, Low Noise, Low Power 2.5 mm Focal Plane Array Features ESO • • • • • • High Resolution 18.5µ m Pixel Pitch Ultra-Low Read Noise with Off-Chip CDS 3e- read noise measured with multiple reads Low Power ROIC/Readout Architecture
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HgCdTe
Abstract: cell phone detector circuit roic HgCdTe FPA cdznte focal plane array 0.8um cmos MWIR detector Hall 01E HGCDTE detector
Text: TM 5.0m m Infrared Focal Plane Array High Speed, Low Noise, Low Power 1024 x 1024 HgCdTe/CdZnTe Features • • • • • • • • • • • Uses the same ROIC as SWIR HAWAII TM High Resolution 18.5µm Pixel Pitch <3e- Read Noise with multiple reads
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0E-01
0E-02
HgCdTe
cell phone detector circuit
roic
HgCdTe FPA
cdznte
focal plane array
0.8um cmos
MWIR detector
Hall 01E
HGCDTE detector
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Untitled
Abstract: No abstract text available
Text: InGaAsエリアイメージセンサ G12460-0606S 64x64画素の近赤外2次元イメージセンサ G12460-0606SはCMOS読み出し回路 ROIC: readout integrated circuit と裏面入射型InGaAsフォトダイオードのハイブ リッド構造を採用しています。1画素は1つのInGaAsフォトダイオードと1つのROICによって構成され、Inバンプにより電
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G12460-0606S
G12460-0606Sã
KMIR1023J03
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Untitled
Abstract: No abstract text available
Text: InGaAsエリアイメージセンサ G12242-0707W 128 x 128画素の近赤外2次元イメージセンサ G12242-0707WはCMOS読み出し回路 ROIC: readout integrated circuit と裏面入射型InGaAsフォトダイオードのハイ ブリッド構造を採用しています。1画素は1つのInGaAsフォトダイオードと1つのROICによって構成され、Inバンプにより
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G12242-0707W
G12242-0707Wã
KMIR1022J03
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
KMIR1016E03
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Untitled
Abstract: No abstract text available
Text: InGaAsエリアイメージセンサ G11097-0606S 64x64画素の近赤外2次元イメージセンサ G11097-0606SはCMOS読み出し回路 ROIC: readout integrated circuit と裏面入射型InGaAsフォトダイオードのハイブ リッド構造を採用しています。1画素は1つのInGaAsフォトダイオードと1つのROICによって構成され、Inバンプにより電
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G11097-0606S
G11097-0606Sã
KMIR1016J05
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Untitled
Abstract: No abstract text available
Text: InGaAsエリアイメージセンサ G11097-0707S 128x128画素の近赤外2次元イメージセンサ G11097-0707SはCMOS読み出し回路 ROIC: readout integrated circuit と裏面入射型InGaAsフォトダイオードのハイブ リッド構造を採用しています。1画素は1つのInGaAsフォトダイオードと1つのROICによって構成され、バンプにより電気
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G11097-0707S
G11097-0707Sã
KMIR1021J05
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G11097-0606S
Abstract: package TO8-16
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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Original
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G11097-0606S
G11097-0606S
KMIR1016E03
package TO8-16
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
SE-171
KMIR1016E03
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C10500
Abstract: No abstract text available
Text: セレクションガイド 2013.11 イメージセンサ 幅 広 い 波 長 範 囲 に 対 応した 計 測 用 イメ ー ジ セ ン サ IMAGE SENSOR イメージセンサ 幅広い波長範囲に対応した 計測用イメージセンサ 浜 松ホトニクスは赤 外から可 視・紫 外・真 空 紫 外・
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12F100A
Abstract: 6F60A
Text: Diodes International I O R Rectifier ANN:V;KSAITT IV » ? 1-JV.- V fM @ T tX Part Number Vrim V 1FAV@ TC W {Q 50 Hi 00 Fax on Demand Number •fsm (A) 60H z Roic(Dq (A) Pr (°c/w) “C/W Notes Cate Outllne Key Avalanche DO-2Q3AA (DO-4) A 6F40 400 6 158 1.1
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6F100
6F120
12F40
12F60
12F80
12F100
16F40
16F60
25F40
25F60
12F100A
6F60A
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H400X
Abstract: No abstract text available
Text: SJiM JÊ^Utes PRODUCT SELECTION LISTING S S F -L X H 100X X S ER IES FEATURES • Easy P.C. Installation • S^ap-together Design • C roice of Colors. Current • Banking Type Option APPLICATIONS • Fault Indicator ■ Back Light ing Indicator * P.C. Mount Indicators
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SSF-LXH100ID
SSF-LXH100GD
LXH100HGW
SSF-LXH100LIDtors
LXH400ID
XH400SRD
XH400GD
LXH400YD
XH400HGW
XH400UD
H400X
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TA8215H
Abstract: TA8215L TA82 ta82*8 TA821 toshiba Bipolar Linear Integrated Circuit Silicon 2 x 1w audio amplifier circuit diagram
Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA8215H, TA8215L SILICON MONOLITHIC 18W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance 6]-T of TA8215H and TA8215L package designed for low thermal resistance, has a high
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TA8215H,
TA8215L
TA8215H
TA8215L
TA8215H-9
HZIP17-P
TA82
ta82*8
TA821
toshiba Bipolar Linear Integrated Circuit Silicon
2 x 1w audio amplifier circuit diagram
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor Preliminary Data Sheet SR 2530.2545 Series 25 AMP HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIERS Description Mechanical Dimensions o O o High Surge Voltage and Transient Protection Meets or Exceeds UL Flammability Specification 94V-0 High Efficiency with Low Power Loss
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00DD3ion
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2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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Untitled
Abstract: No abstract text available
Text: p ilC R O N MT5C1008 SRAM 128Kx 8 SRAM FEATURES PIN ASSIGNM ENT Top View • High speed: 2 0 ,2 5 , 35 and 45ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE
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MT5C1008
128Kx
32-Pin
MT5C100B
MT5C1008
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IC8013
Abstract: No abstract text available
Text: General Description Features T h e M IC 8 013 d riv e r is d e s ig n e d fo r use w ith liquid crysta l displays. A seria l da ta inte rface is use d to load an inte rnal register, w hich in turn co n tro ls th e s e g m e n t ou tputs. A FIFO ou tput allow s m u ltip le c h ip s to be casca ded an d p ro
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S4520
MIC8013-01
40-Pin
IC8013
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LSE B10 transformer
Abstract: No abstract text available
Text: DATA SH EET FEBRUARY 1999 Revision 1.0 LXT380 Octal E1 G.703 Transceiver General Description The LXT380 is an octal short haul PCM transceiver for ITU G.703 2.048 Mbit/sec. transmission systems. It incorporates eight independent receivers and eight independent transmitters in a sin
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LXT380
LXT380
LQFP-144
BGA-160
LSE B10 transformer
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z103c
Abstract: hitachi pmos microcomputer TWT Wiring DP-64S HD404019F HD404019H HD404019S HD4074019 HMCS400 HMCS408
Text: HD404019/HD407401 — Preliminary— D escription T h e HD404019, HD4074019 a re CMOS 4 -b it sin g le-ch ip m icro co m p u ters in th e HM CS400 series, E ac h d e v ic e in co rp o ra te s ROM, RAM, I/O , serial in terface, a n d 2 tim e r/c o u n te rs a n d
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HD404019/HD4074019
HD404019,
HD4074019
HMCS400
10-bit
HD404019
HD4074019
-11-bit
DP-64S
z103c
hitachi pmos microcomputer
TWT Wiring
DP-64S
HD404019F
HD404019H
HD404019S
HMCS408
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