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    Untitled

    Abstract: No abstract text available
    Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an


    Original     		G11097-0606S G11097-0606S KMIR1016E03 PDF

    G11097-0606S

    Abstract: package TO8-16
    Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an


    Original     		G11097-0606S G11097-0606S KMIR1016E03 package TO8-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an


    Original     		G11097-0606S G11097-0606S SE-171 KMIR1016E03 PDF