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    RJL5012DPP Search Results

    RJL5012DPP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJL5012DPP-M0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 500V 12A 700Mohm To-220Fl Visit Renesas Electronics Corporation
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    RJL5012DPP Price and Stock

    Renesas Electronics Corporation RJL5012DPP-M0#T2

    MOSFET N-CH 500V 12A TO220FL
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    Renesas Electronics Corporation RJL5012DPP-00#T2

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    Avnet Americas RJL5012DPP-00#T2 Tube 4 Weeks 90
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    Rochester Electronics RJL5012DPP-00#T2 28,718 1
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    RJL5012DPP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJL5012DPP Renesas Technology MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1050; toff ( us) typ: -; Package: TO-220FN Original PDF
    RJL5012DPP-M0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO220 Original PDF

    RJL5012DPP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1746-0100 Rev.1.00 Oct 20, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A


    Original     		PDF RJL5012DPP REJ03G1746-0100 PRSS0003AB-A O-220FN)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0419EJ0100 Rev.1.00 May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJL5012DPP-M0 R07DS0419EJ0100 PRSS0003AF-A O-220FL)

    RJL5012DPP-M0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0419EJ0100 Rev.1.00 May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJL5012DPP-M0 R07DS0419EJ0100 PRSS0003AF-A O-220FL) RJL5012DPP-M0

    RJL5012DPP

    Abstract: RJL5012DPP-00-T2
    Text: RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1746-0200 Rev.2.00 Mar 05, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A


    Original     		PDF RJL5012DPP REJ03G1746-0200 PRSS0003AB-A O-220FN) RJL5012DPP RJL5012DPP-00-T2

    RJL5012DPP

    Abstract: RJL5012DPP-00-T2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    Hdd spindle motor

    Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
    Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts


    Original     		PDF O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA