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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0419EJ0100 Rev.1.00 May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJL5012DPP-M0 R07DS0419EJ0100 PRSS0003AF-A O-220FL)

    RJL5012DPP-M0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0419EJ0100 Rev.1.00 May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJL5012DPP-M0 R07DS0419EJ0100 PRSS0003AF-A O-220FL) RJL5012DPP-M0