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    RJK6014DPP Search Results

    RJK6014DPP Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6014DPP-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 16A 575Mohm To-220Fp Visit Renesas Electronics Corporation
    RJK6014DPP-00#T2 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK6014DPP-A0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 16A 575Mohm To-220Fpa Visit Renesas Electronics Corporation
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    RJK6014DPP Price and Stock

    Rochester Electronics LLC RJK6014DPP-00#T2

    N-CHANNEL POWER MOSFET
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    DigiKey RJK6014DPP-00#T2 Bulk 70
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    Renesas Electronics Corporation RJK6014DPP-E0#T2

    MOSFET N-CH 600V 16A TO220FP
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    DigiKey RJK6014DPP-E0#T2 Tube
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    Rochester Electronics RJK6014DPP-E0#T2 5,107 1
    • 1 $5.6
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    Rochester Electronics LLC RJK6014DPP-E0#T2

    POWER FIELD-EFFECT TRANSISTOR
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    DigiKey RJK6014DPP-E0#T2 Bulk 55
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    Renesas Electronics Corporation RJK6014DPP-00#T2

    Power Field-Effect Transistor, N-Channel MOSFET '
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    Rochester Electronics RJK6014DPP-00#T2 420 1
    • 1 $4.39
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    RJK6014DPP Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK6014DPP Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6014DPP-00-T2 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6014DPP-E0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 16A TO220 Original PDF

    RJK6014DPP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK6014DPP

    Abstract: RJK6014DPP-00-T2
    Text: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate


    Original     		PDF RJK6014DPP REJ03G1531-0100 PRSS0003AB-A O-220FN) RJK6014DPP RJK6014DPP-00-T2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP-E0 600V - 16A - MOS FET High Speed Power Switching R07DS0613EJ0100 Rev.1.00 Mar 19, 2012 Features • Low on-resistance RDS on = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK6014DPP-E0 R07DS0613EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6014DPP R07DS0244EJ0200 REJ03G1531-0100) PRSS0003AB-A O-220FN)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6014DPP R07DS0244EJ0200 REJ03G1531-0100) PRSS0003AB-A O-220FN) imped9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP-E0 600V - 16A - MOS FET High Speed Power Switching R07DS0613EJ0100 Rev.1.00 Mar 19, 2012 Features • Low on-resistance RDS on = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK6014DPP-E0 R07DS0613EJ0100 PRSS0003AG-A O-220FP)

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Text: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


    Original     		PDF RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114