RJH608 Search Results

RJH608 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJH6086BDPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 198.4W TO-3P		Original	PDF
RJH6087BDPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 223.2W TO-3P		Original	PDF
RJH6088BDPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 268.8W TO-3P		Original	PDF

RJH608 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage	Original	RJH6088BDPK R07DS0390EJ0100 PRSS0004ZE-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage	Original	RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: SC-65 Text: Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Features • Ultra high speed switching tf = 36 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load  Low on-state voltage	Original	RJH6086BDPK R07DS0470EJ0100 PRSS0004ZE-A PRSS0004ZE-A SC-65	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage	Original	RJH6088BDPK R07DS0390EJ0100 PRSS0004ZE-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Features • Ultra high speed switching tf = 36 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load  Low on-state voltage	Original	RJH6086BDPK R07DS0470EJ0100 PRSS0004ZE-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage	Original	RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A	PDF
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608	PDF
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114	PDF