RHRD660
Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
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RHRD640,
RHRD650,
RHRD660,
RHRD640S,
RHRD650S,
RHRD660S
175oC
O-251
O-252
RHRD660
rhr660
rhr650
RHRD650
RHRD640S
RHRD660S
RHRD660S9A
RHR640
RHRD640
RHRD650S
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rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
Text: RHRD660, RHRD660S Data Sheet Title HR 60, HRD 0S bt A, 0V pert odes January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRD660,
RHRD660S
RHRD660
RHRD660S
rhr660
RHRD660S9A
RHR66
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rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
Text: RHRD660, RHRD660S Data Sheet January 2002 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD660,
RHRD660S
RHRD660
RHRD660S
rhr660
RHRD660S9A
RHR66
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rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A
Text: RHRD660, RHRD660S Data Sheet January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRD660,
RHRD660S
RHRD660
RHRD660S
175oC
rhr660
RHRD660S9A
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Untitled
Abstract: No abstract text available
Text: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD660S9A
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD660S9A
175oC
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rhr660
Abstract: No abstract text available
Text: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD660S9A
175oC
rhr660
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Untitled
Abstract: No abstract text available
Text: RHRD660S November 2013 Data Sheet 6 A, 600 V, Hyperfast Diode Features • Hyperfast Recovery trr = 35 ns @ IF = 6 A The RHRD660S9A is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated
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RHRD660S
RHRD660S9A
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RHR660
Abstract: RHRD660S9A
Text: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD660S9A
175oC
RHR660
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rhr660
Abstract: rhr650 RHR640 TA49057
Text: RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S April 1995 6A, 400V - 600V Hyperfast Diodes Features RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and RHRD660S are hyperfast diodes with soft recovery characteristics tRR < 30ns . They have half the recovery time of
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RHRD640,
RHRD650,
RHRD660,
RHRD640S,
RHRD650S,
RHRD660S
rhr660
rhr650
RHR640
TA49057
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rhr660
Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
Text: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRD660,
RHRD660S
RHRD660
RHRD660S
TA49057.
rhr660
TA49057
RHRD660S9A
UJ45
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rhr660
Abstract: No abstract text available
Text: I-LA JR F R IS s EM, c o N0 u c T 0R RHRD640, RHRD650, RHRD660, RHRD640S RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . <30ns • Operating Temperature. +175°C • Reverse Voltage Up To.
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RHRD640,
RHRD650,
RHRD660,
RHRD640S)
RHRD650S,
RHRD660S
O-251
O-252
rhr660
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