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    RHRD660

    Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
    Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC


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    PDF RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 175oC O-251 O-252 RHRD660 rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S

    rhr660

    Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
    Text: RHRD660, RHRD660S Data Sheet Title HR 60, HRD 0S bt A, 0V pert odes January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride


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    PDF RHRD660, RHRD660S RHRD660 RHRD660S rhr660 RHRD660S9A RHR66

    rhr660

    Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
    Text: RHRD660, RHRD660S Data Sheet January 2002 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRD660, RHRD660S RHRD660 RHRD660S rhr660 RHRD660S9A RHR66

    rhr660

    Abstract: RHRD660 RHRD660S RHRD660S9A
    Text: RHRD660, RHRD660S Data Sheet January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride


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    PDF RHRD660, RHRD660S RHRD660 RHRD660S 175oC rhr660 RHRD660S9A

    Untitled

    Abstract: No abstract text available
    Text: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRD660S9A

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRD660S9A 175oC

    rhr660

    Abstract: No abstract text available
    Text: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRD660S9A 175oC rhr660

    Untitled

    Abstract: No abstract text available
    Text: RHRD660S November 2013 Data Sheet 6 A, 600 V, Hyperfast Diode Features • Hyperfast Recovery trr = 35 ns @ IF = 6 A The RHRD660S9A is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated


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    PDF RHRD660S RHRD660S9A

    RHR660

    Abstract: RHRD660S9A
    Text: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRD660S9A 175oC RHR660

    rhr660

    Abstract: rhr650 RHR640 TA49057
    Text: RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S April 1995 6A, 400V - 600V Hyperfast Diodes Features RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and RHRD660S are hyperfast diodes with soft recovery characteristics tRR < 30ns . They have half the recovery time of


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    PDF RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S rhr660 rhr650 RHR640 TA49057

    rhr660

    Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
    Text: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride


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    PDF RHRD660, RHRD660S RHRD660 RHRD660S TA49057. rhr660 TA49057 RHRD660S9A UJ45

    rhr660

    Abstract: No abstract text available
    Text: I-LA JR F R IS s EM, c o N0 u c T 0R RHRD640, RHRD650, RHRD660, RHRD640S RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . <30ns • Operating Temperature. +175°C • Reverse Voltage Up To.


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    PDF RHRD640, RHRD650, RHRD660, RHRD640S) RHRD650S, RHRD660S O-251 O-252 rhr660