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    onsemi RFP22N10

    MOSFET N-CH 100V 22A TO220-3
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    DigiKey RFP22N10 Tube 400
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    Quest Components RFP22N10 3,840
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    • 100 $3.3945
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    Harris Semiconductor RFP22N10

    MOSFET Transistor, N-Channel, TO-220AB
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    Quest Components RFP22N10 26
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    RFP22N10 6
    • 1 $6.1386
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    Fairchild Semiconductor Corporation RFP22N10

    22A, 100V, 0.080 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA RFP22N10 1,915
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    RFP22N10 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP22N10 Fairchild Semiconductor 22A, 100V, 0.080 ?, N-Channel Power MOSFETs Original PDF
    RFP22N10 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP22N10 Intersil 22A, 100V, 0.080 ?, N-Channel Power MOSFETs Original PDF
    RFP22N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP22N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP22N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP22N10, RF1S22N10SM 175oC TB334 RFP22N10

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10

    HIP4080 amplifier circuit diagram class D

    Abstract: HIP4080AIP 150w mosfet audio amplifier 100w audio CLASS D amplifier diagram 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM 100w audio amplifier circuit diagram class D 100w mosfet audio amplifier circuit diagram HIP4080 100w class-d audio amplifier circuit diagram
    Text: HIP4080AEVAL2 High Power Digital Audio Amplifier Evaluation Board for HIP4080A January 1998 Features Description • 150W at 86% Efficiency The HIP4080AEVAL2 Evaluation Board is a 150W Class D Audio Amplifier utilizing Intersil HIP4080AIP Full Bridge MOSFET driver in conjunction with RFP22N10 MOSFETs.


    Original     		PDF HIP4080AEVAL2 HIP4080A HIP4080AEVAL2 HIP4080AIP RFP22N10 O-220 80kHz 19kHz 20kHz HIP4080 amplifier circuit diagram class D 150w mosfet audio amplifier 100w audio CLASS D amplifier diagram 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM 100w audio amplifier circuit diagram class D 100w mosfet audio amplifier circuit diagram HIP4080 100w class-d audio amplifier circuit diagram

    RFP22N10

    Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 TB334 RF1S22N10SM RF1S22N10SM9A

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    AN9525

    Abstract: HIP4082 HIP4086 home made dc-ac power inverter diagram AN9404 CA3260 bj11 AN9611 AN9642 HIP4081A
    Text: HIP4086 3-Phase Bridge Driver Configurations and Applications TM Application Note September 2000 Introduction AN9642.2 Starting with the HIP4086, the use of negative logic for the high-side input control allows both high and low side MOSFETs of a phase leg to be controlled without added external logic.


    Original     		PDF HIP4086 AN9642 HIP4086, AN9525 HIP4082 home made dc-ac power inverter diagram AN9404 CA3260 bj11 AN9611 HIP4081A

    varistor 472 SUS

    Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
    Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross


    Original     		PDF AN-7514 varistor 472 SUS rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    AN9404

    Abstract: PWM 3 phase dc-ac inverter three AN9525 AN9642 AN9611 AN9405 HIP4086
    Text: Harris Semiconductor No. AN9642.1 Harris Intelligent Power January 1998 HIP4086 3-Phase Bridge Driver Configurations and Applications Authors: George Danz, Larry Streit Introduction Starting with the HIP4086, the use of negative logic for the high-side input control allows both high and low side


    Original     		PDF AN9642 HIP4086 HIP4086, 1-800-4-HARRIS AN9404 PWM 3 phase dc-ac inverter three AN9525 AN9611 AN9405

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    varistor 472 SUS

    Abstract: Transient Voltage Suppression Devices, Harris RFP22N10 355a transistor landis rpf22n10 IAS25 AN9321 C150 IAS150
    Text: Harris Semiconductor No. AN9321 Harris Power February 1994 SINGLE PULSE UNCLAMPED INDUCTIVE SWITCHING: A RATING SYSTEM Author: Harold Ronan Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on


    Original     		PDF AN9321 SSD-450) varistor 472 SUS Transient Voltage Suppression Devices, Harris RFP22N10 355a transistor landis rpf22n10 IAS25 AN9321 C150 IAS150

    AN9321

    Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055
    Text: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original     		PDF AN9512 1-800-4-HARRIS AN9321 S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    AN9405

    Abstract: PWM 3 phase dc-ac inverter three HIP4086 HIP4082 AN9404 AN9525 schematic diagram dc-ac inverter sensor CA3260 HIP4080A HIP408X
    Text: HIP4086 3-Phase Bridge Driver Configurations and Applications Application Note January 1998 AN9642.1 Authors: George Danz, Larry Streit Introduction This application note describes the HIP4086 Three Phase MOSFET bridge driver, popular configurations in which the


    Original     		PDF HIP4086 AN9642 AN9405 PWM 3 phase dc-ac inverter three HIP4082 AN9404 AN9525 schematic diagram dc-ac inverter sensor CA3260 HIP4080A HIP408X

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    AN-7514

    Abstract: fark AN-7517 RFP22N10 RFP3055 RFP45N06 RFP50N06 RFP70N06 ierc heatsink PSD1-2U
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N75 ubct ractil pect of ing werOS an tors ive duce ads) utho ) eyords nter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original     		PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    schematic diagram dc-ac inverter sensor

    Abstract: HIP4082 AN9405 Common rail injector driver schematic diagram dc-ac inverter inductive load AN9404 DC-AC Power Inverter schematic BJ10 schematic using ic 4049 HIP4086
    Text: HIP4086 3-Phase Bridge Driver Configurations and Applications Application Note February 2003 Introduction AN9642.3 Starting with the HIP4086, the use of negative logic for the high-side input control allows both high and low side MOSFETs of a phase leg to be controlled without added external logic.


    Original     		PDF HIP4086 AN9642 HIP4086, schematic diagram dc-ac inverter sensor HIP4082 AN9405 Common rail injector driver schematic diagram dc-ac inverter inductive load AN9404 DC-AC Power Inverter schematic BJ10 schematic using ic 4049

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP22N10, RF1S22N10SM TA9845. 080C1 RFP22N10

    RFP22N10

    Abstract: TA9845
    Text: ASSESS? RFP22N10, RF1S22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		PDF RFP22N10, RF1S22N10, RF1S22N10SM O-263AB RF1S22N10SM O-263AB RFP22N10 TA9845

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r