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    Harris Semiconductor RFH35N08

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    RFH35N08 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFH35N08 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFH35N08 General Electric POWER MOS FIELD - EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS Scan PDF
    RFH35N08 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 35A. Scan PDF
    RFH35N08 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFH35N08 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFH35N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFH35N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 'jziizu <^s.tni- Lonauctoi i, One, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH35N08, RFH35N10 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode Power Field-Effect Transistors


    Original     		PDF RFH35N08, RFH35N10 RFH35N08 RFH35N10* RFH3SN10 RFH35N08 00A//JS

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    RFH35N08

    Abstract: RFH35N10
    Text: _~DÏ D Ë J 3Û 75 DÛ 1 D D l ö S O l fl J 3 8 7 5 Ö 8 1 G E S O L I D S TA TE Standard Power M O S F E T s_ 0 1E 18201 RFH35N08, RFH35N10 DT - S ^ ^ IS File Number 1634 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode


    OCR Scan     		PDF RFH35N08, RFH35N10 92CS-J374I RFH35N08 RFH35N10* 3fi75GÃ 92cs-38775 92CS-JTI7I RFH35N10

    J374

    Abstract: RFH35N08 RFH35N10 RFK35N10 RFK35N08
    Text: _~DÏ D Ë J 3Û75DÛ1 D D l ö S O l 3 8 7 5 Ö 8 1 G E SOLID fl J - STATE Standard Pow er M O S F E T s _ 0 1E 18201 RFH35N08, RFH35N10 DT - S ^ ^ I S File N u m b e r 1634 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode


    OCR Scan     		PDF RFH35N08, RFH35N10 92CS-J374I RFH35N08 RFH35N10* 2CS17W7 92c5-37i73 PMP411A. CS-S7I74 92cs-37i75 J374 RFH35N10 RFK35N10 RFK35N08

    RFH35N08

    Abstract: RFH35N10
    Text: Standard Power MOSFETs File Number 1634 RFH35N08, RFH35N10 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 35 A, 80 V - 100 V TDSioni = 0.055 O Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF RFH35N08, RFH35N10 RFH35N08 RFH35N10* AN-7254 AN-7260. 92cs-37i74 37i76 RFH35N10

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 00S4430 TET ■ HAS RFH35N08 RFH35N10 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package TO -21 8 A C • 35 A , 8 0 V and 100V TOP VIEW • rog o n = 0 .0 5 5 0 • S O A is P ow er-D issip atio n Limited


    OCR Scan     		PDF 00S4430 RFH35N08 RFH35N10 9JCS-57I74

    Untitled

    Abstract: No abstract text available
    Text: RFH35N08 RFH35N10 2 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1 9 9 1 Features Package T O -2 1 8 A C • 35A, 8 0 V and 100V T O P VIE W • nDS on) = 0 .0 5 5 0 • SO A is P ow er-D issip atio n Limited •SOURCE DRAIN


    OCR Scan     		PDF RFH35N08 RFH35N10 RFH35N08, 92CS-JH73 AN-7254 AN-7260 92CS-37175

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G