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    RFD16N05SM9A Price and Stock

    onsemi RFD16N05SM9A

    MOSFET N-CH 50V 16A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD16N05SM9A Digi-Reel 7,558 1
    • 1 $1.42
    • 10 $0.995
    • 100 $1.42
    • 1000 $0.56411
    • 10000 $0.56411
    		Buy Now
    RFD16N05SM9A Cut Tape 7,558 1
    • 1 $1.42
    • 10 $0.995
    • 100 $1.42
    • 1000 $0.56411
    • 10000 $0.56411
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    RFD16N05SM9A Reel 7,500 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.50825
    		Buy Now
    Avnet Americas RFD16N05SM9A Reel 14 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.44693
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    Mouser Electronics RFD16N05SM9A 9,990
    • 1 $1.55
    • 10 $1.06
    • 100 $0.73
    • 1000 $0.535
    • 10000 $0.535
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    Newark RFD16N05SM9A Cut Tape 2,500
    • 1 -
    • 10 -
    • 100 $0.766
    • 1000 $0.766
    • 10000 $0.766
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    RFD16N05SM9A Reel 2,500
    • 1 $0.644
    • 10 $0.644
    • 100 $0.644
    • 1000 $0.644
    • 10000 $0.561
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    Future Electronics RFD16N05SM9A Reel 14 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.44
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    RFD16N05SM9A Reel 6 Weeks 2,500
    • 1 -
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    • 10000 $0.44
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    Onlinecomponents.com RFD16N05SM9A
    • 1 -
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    • 10000 $0.4548
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    Quest Components RFD16N05SM9A 56
    • 1 $1.33
    • 10 $1.064
    • 100 $0.665
    • 1000 $0.665
    • 10000 $0.665
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    Ameya Holding Limited RFD16N05SM9A 4,010
    • 1 -
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    Richardson RFPD RFD16N05SM9A 2,500
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    • 10000 $0.47
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    Avnet Asia RFD16N05SM9A 14 Weeks 2,500
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    • 10000 $0.47949
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    Avnet Silica RFD16N05SM9A 15 Weeks 2,500
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    EBV Elektronik RFD16N05SM9A 16 Weeks 2,500
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    Fairchild Semiconductor Corporation RFD16N05SM9A

    POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 50V, 0.047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD16N05SM9A 104
    • 1 $1.33
    • 10 $1.33
    • 100 $0.399
    • 1000 $0.399
    • 10000 $0.399
    		Buy Now

    Harris Semiconductor RFD16N05SM9A

    POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 50V, 0.047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD16N05SM9A 51
    • 1 $1.05
    • 10 $0.875
    • 100 $0.63
    • 1000 $0.63
    • 10000 $0.63
    		Buy Now

    Harris Semiconductor RFD16N05SM9AS2480

    RFD16N05 - 16A, 50V, 0.056Ohm, N-Channel, Power Mosfet '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD16N05SM9AS2480 475 1
    • 1 $0.5525
    • 10 $0.5525
    • 100 $0.5193
    • 1000 $0.4696
    • 10000 $0.4696
    		Buy Now

    Intersil Corporation RFD16N05SM9A

    16 A, 50 V, 0.047 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA RFD16N05SM9A 10,955
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    Find more RFD16N05SM9A price and stock on Findchips.com

    RFD16N05SM9A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N05SM9A Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFET Original PDF
    RFD16N05SM9A Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs Original PDF
    RFD16N05SM9A_NL Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs Original PDF

    RFD16N05SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.


    Original     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    f16n05

    Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
    Text: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model


    Original     		RFD16N05, RFD16N05SM O-251AA 175oC O-252AA RFD16N05 RFD16N05SM 1e-30 07e-3 19e-7) f16n05 RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 PDF

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a PDF

    D16N05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. D16N05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05SM September 2013 Data Sheet N-Channel Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		RFD16N05SM RFD16N05 RFD16N05SM TA09771. RFD16N05SM9A PDF

    f16n05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. f16n05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. PDF

    304E3

    Abstract: rfd16n05sm9a 66E-6
    Text: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)


    OCR Scan     		RFD16N05, RFD16N05SM O-251AA 0-047U O-252AA RFD16N05 RFD16N05SM O-251AA O-252AA F16N05 304E3 rfd16n05sm9a 66E-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan     		RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2 PDF