Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF TRANSISTORS VISHAY Search Results

    RF TRANSISTORS VISHAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTORS VISHAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3

    MRF6V14300H

    Abstract: AN1955 MRF6V14300HR3 MRF6V14300HSR3 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300HR3 MRF6V14300H AN1955 MRF6V14300HSR3 250GX-0300-55-22

    J266

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300H J266

    GRM31CR72A105K

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500H GRM31CR72A105K

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 MMRF1008HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1008H MMRF1008HR5 MMRF1008HSR5 MMRF1008HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300HR3

    G2225X7R225KT3AB

    Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5

    r2561

    Abstract: MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HR3 MRF6V12500HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3 r2561 MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HSR3

    arco capacitors 262

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 ATC100B330
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300HR3 arco capacitors 262 A114 A115 AN1955 C101 JESD22 MRF6V14300H MRF6V14300HSR3 ATC100B330

    r2561

    Abstract: MRF6V12500HR3 ATC100B330JT500XT AN1955 MRF6V12500H MRF6V12500HSR3 G2225
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 2, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 50yees, MRF6V12500HR3 r2561 ATC100B330JT500XT AN1955 MRF6V12500H MRF6V12500HSR3 G2225

    Freescale Xtrinsic

    Abstract: C182 MRF6V12500H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 Freescale Xtrinsic C182

    MRF6V12250HSR3

    Abstract: MRF6V12250H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 0, 5/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250H MRF6V12250HSR3

    G2225X7R225KT3AB

    Abstract: ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 1, 7/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.


    Original     		PDF MMRF1018N MMRF1018NR1 MMRF1018NBR1 MMRF1018NR1 7/2014Semiconductor,

    ATC800B1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for applications operating at 1300 MHz.


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 ATC800B1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    mrf6v13250h

    Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 mrf6v13250h ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1005H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1005HR5 MMRF1005HSR5 RF power transistors designed for CW and pulse applications operating at


    Original     		PDF MMRF1005H MMRF1005HR5 MMRF1005HSR5 MMRF1005HR5

    M27500-16RC1509

    Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100H M27500-16RC1509 ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf