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    Kyocera AVX Components 100B330JT500XT

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    Kyocera AVX Components 100B330JT500XTV

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    American Technical Ceramics Corp ATC100B330JT500XT

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    ATC100B330JT500XT Datasheets Context Search

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    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT

    J266

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300H J266

    GRM31CR72A105K

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500H GRM31CR72A105K

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT

    MRF6VP11KH

    Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 MMRF1008HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1008H MMRF1008HR5 MMRF1008HSR5 MMRF1008HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to


    Original     		PDF MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		PDF MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio

    J1220

    Abstract: 100WpEp MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT

    G2225X7R225KT3AB

    Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k

    ATC100B9R1CT500XT

    Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B9R1CT500XT 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS A114

    IS680-280

    Abstract: MWE6IC9080N AN3263 AN1977 AN1987 MWE6IC9080NR1 atc100b6r8
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 IS680-280 AN3263 AN1977 AN1987 atc100b6r8

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5