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    RF TRANSISTOR 1 WATT Search Results

    RF TRANSISTOR 1 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 1 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    C5750X7S2A106M

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3 C5750X7S2A106M

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,

    j292

    Abstract: aft23h200-4s2l
    Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT23H200-4S2L AFT23H200-4S2LR6 j292

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3

    9434

    Abstract: RF 1501 100 watt transistor
    Text: e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 RF 1501 100 watt transistor

    JX900

    Abstract: No abstract text available
    Text: e PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB JX900

    F35V

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V

    Untitled

    Abstract: No abstract text available
    Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3

    26VDC

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20046 1 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Description Key Features The 20046 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 1 Watts minimum


    OCR Scan     		PDF 26Vdc, 26VDC

    100 watt transistor

    Abstract: RF Transistor 1500 MHZ
    Text: ERICSSON ^ PTB 20046 1 Watt, 1477-1501 MHz Cellular Radio RF Power Transistor D escription The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1477 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON PTB 201 89 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20189 is a class A/AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 900-960 MHz frequency band. It is rated at 1 Watt minimum output power


    OCR Scan     		PDF 900-960MHz) 175mA

    lc 945 p transistor NPN TO 92

    Abstract: lc 945 p transistor lc 945 transistor lc 945 p transistor NPN
    Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20248 0.7 Watts, 1 4 6 5 - 1 5 1 3 MHz Cellular Radio RF P o w e r Transistor Description The 20248 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    VK200 ferrite choke

    Abstract: MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke
    Text: MRF5176 silicon The RF Line 15 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 200 *6 00 M H z frequency range. • Specified 28 V o lt, 4 0 0 M H z Characteristics O utp ut Power = 1 5 Watts


    OCR Scan     		PDF MRF5176 VK200 ferrite choke MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke

    ic ca 747

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, com mon em itter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON í PTB 20191 12 Watts, 1 . 7 8 - 1 . 9 2 GHz RF P o wer Transistor Description The 20191 is a class AB, N PN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


    OCR Scan     		PDF

    transistor b 1166

    Abstract: IC 935 947 transistor
    Text: ERICSSON ^ P TI R o n i7 l D ¿ U 1 f i Preliminary r 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Key Features Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960


    OCR Scan     		PDF 150mA transistor b 1166 IC 935 947 transistor

    2n5642

    Abstract: 2N5642 motorola 2N5642 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •


    OCR Scan     		PDF 2N5642 2n5642 2N5642 motorola 2N5642 equivalent