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    AFT18HW355S Search Results

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    AFT18HW355S Price and Stock

    Rochester Electronics LLC AFT18HW355SR5

    RF MOSFET
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    DigiKey AFT18HW355SR5 Bulk 50 2
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    NXP Semiconductors AFT18HW355SR5

    RF MOSFET LDMOS 28V NI1230
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    Rochester Electronics AFT18HW355SR5 50 1
    • 1 $277.95
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    NXP Semiconductors AFT18HW355SR6

    RF MOSFET LDMOS 28V NI1230
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    Freescale Semiconductor AFT18HW355SR6

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    Freescale Semiconductor AFT18HW355SR5

    RF N-Channel Power MOSFET
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    Rochester Electronics AFT18HW355SR5 50 1
    • 1 $277.95
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    AFT18HW355S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AFT18HW355SR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 1.8GHZ NI1230S-4S Original PDF
    AFT18HW355SR5,178 NXP Semiconductors RF POWER FIELD-EFFECT TRANSISTOR Original PDF
    AFT18HW355SR6 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 1.8GHZ NI1230S-4S Original PDF

    AFT18HW355S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6

    TRANSISTOR J477

    Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
    Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF