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    AFT20P060 Price and Stock

    Rochester Electronics LLC AFT20P060-4NR3

    RF MOSFET LDMOS 28V OM780-4
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    DigiKey AFT20P060-4NR3 Bulk 1,730 8
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    NXP Semiconductors AFT20P060-4NR3

    RF MOSFET LDMOS 28V OM780-4
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    Newark AFT20P060-4NR3 Bulk 250
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    Rochester Electronics AFT20P060-4NR3 1,730 1
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    Flip Electronics AFT20P060-4NR3 22,000
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    NXP Semiconductors AFT20P060-4GNR3

    RF MOSFET LDMOS 28V OM780G-4
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    Rochester Electronics AFT20P060-4GNR3 500 1
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    AFT20P060 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT20P060-4GNR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF LDMOS 6.3W OM780-4GW Original PDF
    AFT20P060-4NR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRAN RF 2GHZ 6.3W OM780-4 Original PDF

    AFT20P060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 1, 12/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 AFT20P060-4GNR3 AFT20P060-4NR3

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF