LORIN
Abstract: 3P3T switch high voltage diode high voltage diodes normal radar circuit PECVD mesa diode
Text: Development of a High Voltage mmW GaAs PIN Diode Switch David Hoag, Daniel Curcio and Timothy Boles M/A-COM: Tyco Electronics, 43 South Ave, Burlington, MA 01803 USA Phone: 781-564-3330, email: hoagd@tycoelectronics.com 2001 GaAs Mantech ABSTRACT The initial development of a three pole three throw,
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construction of photo diode
Abstract: GaAs array, 850nm 850nm Receivers reliability testing for photo diode
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A01
10Gbps)
MXP7000
850nm
850nm
construction of photo diode
GaAs array, 850nm
850nm Receivers
reliability testing for photo diode
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2um ir photodiode
Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A01
10Gbps)
10Gigabit
MXP7000
850nm
2um ir photodiode
construction of photo diode
GaAs 10Gbps photodiode chip
photo diode array
MXP7A01
GaAs array, 850nm
Photo Modules
IR PHOTO DIODE amplifier
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construction of photo diode
Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A02
10Gigabit
MXP7000
850nm
construction of photo diode
photo diode array amplifier
MXP7A02
GaAs array, 850nm
IR PHOTO DIODE amplifier
207UM
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Untitled
Abstract: No abstract text available
Text: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7001
10Gbps
MXP7000
850nm
850nm
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PIN photodiode 850nm
Abstract: MXP7000 MXP7001
Text: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel
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MXP7001
10Gigabit
MXP7000
850nm
PIN photodiode 850nm
MXP7001
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construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Text: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
125Gbps
MXP7000
850nm
construction of photo diode
MXP7002
PIN PHOTO DIODE
GaAs wafer
850nm Receivers
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Untitled
Abstract: No abstract text available
Text: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
MXP7000
850nm
850nm
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
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PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4002
MXP4000
1310nm
1550nm
MXP4002
PIN PHOTO DIODE
"Photo Diode"
photo diode
construction of photo diode
IR PHOTO DIODE amplifier
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MXP4000
Abstract: PIN PHOTO DIODE construction of photo diode
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4000
MXP4000
PIN PHOTO DIODE
construction of photo diode
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Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
1310nm
1550nm
MXP4000
1550nm
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Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
1310nm
1550nm
MXP4000
1550nm
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
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MXP4002
Abstract: PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
1550nm
MXP4002
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
construction of photo diode
MXP4001
MXP4003
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
p50nm
MXP4002
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
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1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Text: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
MXP4000
PI714-893-2570
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4002
1550nm catv receiver
MXP4001
MXP4002
MXP4003
1430nm
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DIODE ED 16
Abstract: ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth
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MXP4002
1310nm
1550nm
MXP4002
DIODE ED 16
ED 08 diode
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Darlington pair IC
Abstract: Darlington pair IC high current darlington pair power transistor schmitt trigger IC
Text: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington
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IS652A
IS653A
IS652A
IS653A
Darlington pair IC
Darlington pair IC high current
darlington pair power transistor
schmitt trigger IC
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Untitled
Abstract: No abstract text available
Text: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT PACKAGES CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS650A IS651A 2.84 0.45 DESCRIPTION The IS650A Gallium Arsenide Infrared Emitting Diode and the IS651A(NPN Silicon Photo Transistor) are
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IS650A
IS651A
IS650A
IS651A
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Untitled
Abstract: No abstract text available
Text: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS650A IS651A 2.84 0.45 DESCRIPTION The IS650A Gallium Arsenide Infrared Emitting Diode and the IS651A(NPN Silicon Photo Transistor) are
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IS650A
IS651A
IS650A
IS651A
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