PIN photodiode 850nm
Abstract: MXP7000 MXP7001
Text: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel
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MXP7001
10Gigabit
MXP7000
850nm
PIN photodiode 850nm
MXP7001
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Untitled
Abstract: No abstract text available
Text: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7001
10Gbps
MXP7000
850nm
850nm
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construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Text: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
125Gbps
MXP7000
850nm
construction of photo diode
MXP7002
PIN PHOTO DIODE
GaAs wafer
850nm Receivers
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Untitled
Abstract: No abstract text available
Text: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
MXP7000
850nm
850nm
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2um ir photodiode
Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A01
10Gbps)
10Gigabit
MXP7000
850nm
2um ir photodiode
construction of photo diode
GaAs 10Gbps photodiode chip
photo diode array
MXP7A01
GaAs array, 850nm
Photo Modules
IR PHOTO DIODE amplifier
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construction of photo diode
Abstract: GaAs array, 850nm 850nm Receivers reliability testing for photo diode
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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Original
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PDF
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MXP7A01
10Gbps)
MXP7000
850nm
850nm
construction of photo diode
GaAs array, 850nm
850nm Receivers
reliability testing for photo diode
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construction of photo diode
Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A02
10Gigabit
MXP7000
850nm
construction of photo diode
photo diode array amplifier
MXP7A02
GaAs array, 850nm
IR PHOTO DIODE amplifier
207UM
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