MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4000
MXP400x
1310nm
1550nm
MXP4001
00E-12
MXP4002
MXP4000
MXP4001
MXP4002
MXP4003
laser diode 10mw 1550nm
construction of photo diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4001
MXP400x
1310nm
1550nm
00E-11
MXP4000
00E-12
construction of photo diode
MXP4000
MXP4001
MXP4002
MXP4003
PHOTO diode
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1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4005
MXP400X
12GHz
1310nm
1550nm
1550nm
1430nm
1550nm photo diode for 10Gbps
construction of photo diode
MXP4005
1550nm catv receiver
MXP4003
IR PHOTO DIODE amplifier
1550nm optical device
1550nm 10mW photo diode
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MXP400X
Abstract: 7400 family bonder 150-degree
Text: Application Note - MXP400x Wire bond InGaAs/InP PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS W W W. Microsemi .COM Guideline for wire bond to MXP400x bare die. Recommend Wedge Bond used. Wedge detail informations: * 45 degee wire feed angle. * .0015 in. hole size.
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MXP400x
400-15A-32-34
7400 family
bonder
150-degree
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1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
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MXP4005
MXP400X
12GHz
1550nm
508um
1430nm
1550nm
1550nm photo diode for 10Gbps
MXP4003
MXP4005
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1550nm photo diode for 10Gbps
Abstract: No abstract text available
Text: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the
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MXP4005
1310nm
1550nm
MXP400X
1550nm
1430nm
1550nm photo diode for 10Gbps
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Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
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Untitled
Abstract: No abstract text available
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
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MXP4000
1310nm
1550nm
MXP4000
MXP400x
00E-11
00E-12
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
construction of photo diode
MXP4001
MXP4003
MXP4002
PHOTO diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
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DIODE ED
Abstract: DIODE ED 11 ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Extremely Low Dark Current Extremely Low Capacitance
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MXP4001
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
DIODE ED
DIODE ED 11
ED 08 diode
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diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package
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MXP4000
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
diode ed 85
DIODE ED 11
1430nm
ED 08 diode
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subwoofer 1000 watts amplifier
Abstract: 12v subwoofer amp circuits 500w mosfet based pulse width modulation inverter high subwoofer 1000 watts amplifier LX1585 lx1691 350w power amplifier stereo subwoofer pcb 1722 12v class d amplifier 40W high subwoofer 100 watts amplifier
Text: VOLUME New product guide Subwoofer Center Channel 11 Left Front LX1722 Right Front The LX1721 / LX1722 is a high performance Class-D stereo controller IC targeted for high efficiency audio requirements. Ideal for battery powered products, portable systems or space
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LX1722
LX1721
LX1722
subwoofer 1000 watts amplifier
12v subwoofer amp circuits
500w mosfet based pulse width modulation inverter
high subwoofer 1000 watts amplifier
LX1585
lx1691
350w power amplifier stereo
subwoofer pcb 1722
12v class d amplifier 40W
high subwoofer 100 watts amplifier
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
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