MXP4002
Abstract: PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
MXP4002
PHOTO diode
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PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4002
MXP4000
1310nm
1550nm
MXP4002
PIN PHOTO DIODE
"Photo Diode"
photo diode
construction of photo diode
IR PHOTO DIODE amplifier
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
1550nm
MXP4002
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
construction of photo diode
MXP4001
MXP4003
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
p50nm
MXP4002
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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Original
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PDF
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MXP4002
1310nm
1550nm
MXP4000
1550nm
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
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DIODE ED 16
Abstract: ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth
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MXP4002
1310nm
1550nm
MXP4002
DIODE ED 16
ED 08 diode
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MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4000
MXP400x
1310nm
1550nm
MXP4001
00E-12
MXP4002
MXP4000
MXP4001
MXP4002
MXP4003
laser diode 10mw 1550nm
construction of photo diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4001
MXP400x
1310nm
1550nm
00E-11
MXP4000
00E-12
construction of photo diode
MXP4000
MXP4001
MXP4002
MXP4003
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
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Untitled
Abstract: No abstract text available
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
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MXP4000
1310nm
1550nm
MXP4000
MXP400x
00E-11
00E-12
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PIN Photodiode 1550nm
Abstract: photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm InGaas PIN photodiode chip optical amplifier 1550nm rise time PIN photodiode ps photodiode responsivity 1550nm, 1 photodiode PIN 1550nm bandwidth
Text: PRELIMINARY MXP4000 Series InGaAs/InP PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for
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MXP4000
300um2)
MXP4000
MXP4001
MXP4002
MXP4003
1300nm
1550nm
PIN Photodiode 1550nm
photodiode 1550nm bandwidth
PIN Photodiode 1550nm Photodiode 1550nm bandwidth
photodiode responsivity 1550nm 2
InGaAs Photodiode 1550nm
InGaas PIN photodiode chip
optical amplifier 1550nm rise time
PIN photodiode ps
photodiode responsivity 1550nm, 1
photodiode PIN 1550nm bandwidth
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
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diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package
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MXP4000
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
diode ed 85
DIODE ED 11
1430nm
ED 08 diode
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1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Text: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
MXP4000
PI714-893-2570
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4002
1550nm catv receiver
MXP4001
MXP4002
MXP4003
1430nm
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