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Mitsubishi Electric RD02MUS1-101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	RD02MUS1-101		8		1	1 $8.96 10 $5.824 100 $5.824 1000 $5.824 10000 $5.824	Buy Now
Quest Components	RD02MUS1-101		6			1 $12 10 $6 100 $6 1000 $6 10000 $6	Buy Now

RD02MUS Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
RD02MUS1	Mitsubishi	Silicon MOSFET Power Transistor 175 MHz, 520 MHz, 2 W	Original	PDF
RD02MUS1	Mitsubishi	Silicon MOSFET Power Transistor 175MHz, 520MHz,2W	Original	PDF
RD02MUS1	Mitsubishi	Transistor Mosfet N 30V 1.5A	Original	PDF
RD02MUS1B	Mitsubishi	Silicon MOSFET Power Transistor 175MHz,520MHz,2W	Original	PDF
RD02MUS2	Mitsubishi	RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W	Original	PDF

RD02MUS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17	PDF
RD02MUS1 Abstract: 146MHz 488-MHz Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data	Original	AN-UHF-017-B RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 146MHz) 175MHz 175MHz) 440MHz 146MHz 488-MHz	PDF
mosfet 1412 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) mosfet 1412	PDF
rd02mus1 Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and	Original	AN-UHF-017 RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 175MHz 440MHz 450MHz 470MHz AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER	PDF
RD02MVS1 Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501	PDF
transistor rf m 1104 Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po	Original	RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 transistor equivalent D 1047 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power	Original	RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)	PDF
transistor rf m 1104 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) Oct2011 transistor rf m 1104	PDF
RD02MUS1 Abstract: transistor rf m 1104 mosfet 840 datasheet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 mosfet 840 datasheet	PDF
RD02MUS2 Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882 Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882	PDF
GRM1882C1H5R0CZ01D Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V	Original	AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0	PDF
GRM1882C1H330JA01D Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.	Original	AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1	PDF
RD02MUS1B Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems	PDF
RD02MUS1 Abstract: RD02MUS1-101 T112 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems	PDF

RD02MUS2 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power	Original	RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz) 520MHz) Oct2011	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz) 520MHz) 175MHz, 520MHz	PDF
3M Touch Systems Abstract: transistor c 828 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems transistor c 828	PDF
3M Touch Systems Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems	PDF
RD02MUS1B Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems	PDF
pcb warpage after reflow Abstract: RD02MUS1 RD07MVS1 Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1	Original	AN-GEN-034-D RD07MVS1 RD02MUS1 RD02MUS1. AN-GEN-034 507mm. pcb warpage after reflow RD02MUS1	PDF
RD02MUS1 Abstract: T112 transistor marking zg RD02MVS1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than 1.0+/-0.05	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 520MHz	PDF
RD02MUS1 Abstract: MOSFET RF POWER TRANSISTOR VHF Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES — — R evision date: 28 /Apr. 02 I J MI TSUBI SHI RF POWER MOS FET RD02MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power	OCR Scan	1RD02MUS1 520MHz RD02MUS1 520MHz) 25deg MOSFET RF POWER TRANSISTOR VHF	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th/Dec.’02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power	OCR Scan	RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 520MHz)	PDF

RD02MUS Search Results

RD02MUS Price and Stock

Mitsubishi Electric RD02MUS1-101

RD02MUS Datasheets (5)

RD02MUS Datasheets Context Search

RD02MUS1

RD02MUS1

mosfet 1412

rd02mus1

RD02MVS1

transistor rf m 1104

Untitled

transistor rf m 1104

RD02MUS1

RD02MUS2

GRM1882C1H5R0CZ01D

GRM1882C1H330JA01D

RD02MUS1B

RD02MUS1

RD02MUS2

Untitled

3M Touch Systems

3M Touch Systems

RD02MUS1B

pcb warpage after reflow

RD02MUS1

Untitled

RD02MUS1

Untitled