TC51V18165
Abstract: TC51V18165CFT
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC51V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC51V18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.
|
OCR Scan
|
PDF
|
TC51V18165
TC51V18165CJ/CFT
TC51V18165CJ/CFT--31
TC51V18165CJ/CFT--
TC51V18165CFT
|
MC-428LFC72FB-A60
Abstract: MC-428LFC72FH-A60 50A16
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-428LFC72 3.3V OPERATION 8M -W O RD BY 72-B IT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The M C -428LFC72 is a 8,388,608 w ords by 72 bits dynam ic RAM module on which 9 pieces of 64 M DRAM: /iP D 4265805 are assembled.
|
OCR Scan
|
PDF
|
MC-428LFC72
-428LFC72
M168S-50A17-2
MC-428LFC72FB-A60
MC-428LFC72FH-A60
50A16
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2LFB64S 3.3 V OPERATION 2M -W O RD BY 64-B IT DYNAM IC RAM M ODULE SO DIM M , EDO Description The M C -42S2LFB64S is a 2,097,152 w ords by 64 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /¿PD42S17805L are assembled.
|
OCR Scan
|
PDF
|
MC-42S2LFB64S
-42S2LFB64S
uPD42S17805L
C-42S2LFB64S-A60
C-42S2LFB64S-A70
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAB32S series ¡s a 4,194,304 w o rd s by 32 b its d yn a m ic RAM m o d u le (S m a ll O u tlin e D IM M )
|
OCR Scan
|
PDF
|
MC-42S4000LAB32S
32-BIT
-42S4000LAB32S
PD42S17800L
72PIN
tiM57S2S
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.
|
OCR Scan
|
PDF
|
128K-WORD
iPD431009
36-pin
PD431009LE-15
iPD431Q09LE-17
b427525
DGb42T2
P431009
PD431009.
iPD431009LE:
|
TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
|
OCR Scan
|
PDF
|
TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
|
d431008
Abstract: No abstract text available
Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿iPD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.
|
OCR Scan
|
PDF
|
PD431008
128K-WORD
iPD431008
jt/PD431008
32-pin
Acc400
040-o
016to
008tg
P431008
d431008
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: jUPD4217800L are assem bled.
|
OCR Scan
|
PDF
|
MC-422000LAB72F
72-BIT
MC-422000LAB72F
jUPD4217800L
M168S-50A8
b427525
00bl73Ã
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC726 16M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 516 C C 726 is a 1 6 ,777 ,2 16 w o rd s by 72 bits syn ch ro n o u s dyn am ic RAM m odule on w hich 18 piece s of
|
OCR Scan
|
PDF
|
MC-4516CC726
16M-W
72-BIT
MC-4516CC726
uPD4564841
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
|
OCR Scan
|
PDF
|
PD431016L
64K-WORD
16-BIT
//PD431016L
/iPD431016L
44-pin
431016LLE-A
PD431016LLE-A20
/iPD431016L.
/PD431016LLE:
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 58C A 72 4 is a 8,3 8 8 ,6 0 8 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 9 p iece s of 64M
|
OCR Scan
|
PDF
|
MC-458CA724
72-BIT
MC-458CA724
72-bits
uPD4564841
|
4cmv
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M
|
OCR Scan
|
PDF
|
MC-454BA80
80-BIT
MC-454BA80
uPD4516421
4cmv
|
MC-421000AA64FB-70
Abstract: MC-421000AA64FB-60
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C -421000A A 64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DR AM : /¿PD4218160 are assem bled.
|
OCR Scan
|
PDF
|
21000A
64-BIT
MC-421000AA64FB
uPD4218160
b42752S
MC-421000AA64FB-70
MC-421000AA64FB-60
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M
|
OCR Scan
|
PDF
|
MC-4516DA72
72-BIT
uPD4564441
|
|
|
Untitled
Abstract: No abstract text available
Text: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility
|
OCR Scan
|
PDF
|
tiM27SSS
//PD42S4800L,
424800L
PD42S4800L,
424800L
/PD42S4800L
28-pin
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C-421000A32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C -4 210 00A 32 is a 1,0 48,5 76 w o rd s by 32 b its dyn am ic RAM m o d u le on w hich 8 p ie ce s of 4 M DRAM: ¿/PD424400 are assembled.
|
OCR Scan
|
PDF
|
21000A
32-BIT
MC-421000A32
uPD424400
MC-421OOOA32-6D
MC-421000A32-70
MC-421000A32-80
MC-421000A32-10Please
L427525
MC-421000A32B,
|
Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L; 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 w o rd s by 4 bits dyn am ic CMOS RAMs.
|
OCR Scan
|
PDF
|
PD42S16400L;
4216400L,
42S17400L,
4217400L
16M-BIT
/iPD42S16400L,
4217400L
jiPD42S16400L,
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.
|
OCR Scan
|
PDF
|
PD42S16800
42S17800
iiPD42S
42S17800,
PD42S16800,
28-pin
/iPD42S16800-50,
PD42S17800-50,
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT / PD434001 4M -BIT CMOS FAST STATIC RAM 4M-W ORD BY 1-BIT Description The ¿¡PD434001 is a high speed, low pow er, 4 ,1 9 4 ,3 0 4 bits (4 ,1 9 4 ,3 0 4 w o rd s by 1 bit C M O S s ta tic RAM. The ¿¡PD434001 is packed in 32-pin p la s tic SOJ.
|
OCR Scan
|
PDF
|
PD434001
32-pin
uPD434001
LE-20
008tS
PD434001.
PD434001
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 5 1 6 C A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of
|
OCR Scan
|
PDF
|
MC-4516CA724
16M-WORD
72-BIT
MC-4516CA724
PD4564441
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T h e M C -4 5 1 6 D A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of
|
OCR Scan
|
PDF
|
MC-4516DA724
16M-WORD
72-BIT
MC-4516DA724
PD4564441
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.
|
OCR Scan
|
PDF
|
HPD42S16160L,
4216160L,
42S18160L,
4218160L
16M-BIT
16-BIT,
fiPD42S16160L,
4218160L
|
TC55416P-20H
Abstract: TC55416P-15H 55416P TC55416P-25H TC55416P25H TC55416P20H 55416P-35
Text: TC55416P—15H, TC55416P-20H 16,384 W O RD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC 55416P-H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 -v o lt supply. Toshiba's high
|
OCR Scan
|
PDF
|
TC55416P--15H,
TC55416P-20H
TC55416P--H
55416P-H
120mA
100mA
TC55416P-20H
TC55416P-15H
55416P
TC55416P-25H
TC55416P25H
TC55416P20H
55416P-35
|
NL1031
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling
|
OCR Scan
|
PDF
|
IPD48830L
P32G6-65A
NL1031
|
