424260-60
Abstract: 4275a5
Text: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode
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uPD42S4260-60
16-BIT,
iiPD42S4260-60,
/iPD42S4260-60
44-pin
40-pin
b427S25
424260-60
4275a5
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S4800,
iiPD42S4800,
PD42S4800
28-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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riuPD42S16800L
4216800L,
42S17800L,
4217800L
iiPD42S16800L,
4217800L
PD42S16800L,
42S17800L
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TPS 436 IRA
Abstract: IC-3218B
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
iiPD42S16160Lr
4216160L,
42S18160L,
4218160L
TPS 436 IRA
IC-3218B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.
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PD42S16800
42S17800
iiPD42S
42S17800,
PD42S16800,
28-pin
/iPD42S16800-50,
PD42S17800-50,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS 11 INTEGRATED n I Li I i n I b. vCIRCUIT i i i v v i I iv iv w r iiPD42S16160L, 4216160L. 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE RE AD/W RITE MODE DESCRIPTION The /1PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
/1PD42S16160L,
4216160L,
42S18160L,
4218160L
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -4 2S2000LA B 32S series is a 2,097,152 w ords by 32 bits dynamic R A M m odule (Small Outline D IM M ) on which 4 pieces of 16 M DRA M : iiPD42S17800L are assembled.
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MC-42S2000LAB32S
32-BIT
2S2000LA
iiPD42S17800L
72PIN
M72S-50A1-2
b4S752S
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUII MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAA32S series is a 1 048 576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 4 M DRAM : iiPD42S4400LGS (TSOP(II) are assembled.
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MC-42S1000LAA32S
32-BIT
iiPD42S4400LGS
M72S-60A-1
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /x P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escription The /¿PD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).
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16M-BIT
uPD42S17405
uPD4217405
iPD42S17405
PD42S17405,
26-pin
iPD42S17
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IC MARKING A60
Abstract: IC 741 cn
Text: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM
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fa427S25
0D452bl
uPD42S16900L
uPD42S17900L
//PD42S16900L)
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
IC MARKING A60
IC 741 cn
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uPD42S16405-60
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The /¿PD42S16405, 4216405 are 4,194,304 w ords by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S16405
uPD4216405
PD42S16405,
PD42S16405
26-pin
uPD42S16405-50
uPD42S16405-60
uPD42S16405-70
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424260 NEC
Abstract: 424260-80
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte
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PD42S4260,
16-BIT,
/iPD42S4260
44-pin
40-pin
0057Li51
424260 NEC
424260-80
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT /1PD42S4800, 424800 4 M-BIT DYNAM IC RAM 512 K-WORD BY 8-BIT, FA ST PAGE M ODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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/1PD42S4800,
PD42S4800,
jiPD42S4800
28-pin
/IPD42S4800-60,
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Untitled
Abstract: No abstract text available
Text: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte
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bM27S25
004203b
PD42S4190,
256K-WORD
18-BIT,
//PD42S4190,
PD42S4190
44-pin
40-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.
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D42S16800
42S17800
MPD42S16800,
42S17800,
//PD42S16800,
28-pin
juPD42S
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TOED101
Abstract: No abstract text available
Text: NEC M OS INTEGRATED CIRCUIT /¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿iPD42S16800, 42S17800 can execute CAS before RAS self refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
MPD42S16800,
42S17800,
iPD42S16800,
42S17800
28-pin
TOED101
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NEC uPD 688
Abstract: UPD4217400LG3-A60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
NEC uPD 688
UPD4217400LG3-A60
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nec A2C
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
50-pin
42-pin
pPD42S16165L-A60,
4216165L-A60
/iPD42Sl6165L-A70,
nec A2C
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d4217400
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
d4217400
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MPD424260
Abstract: 424260-70 nec japan
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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uPD42S4260
uPD424260
16-BIT,
PD42S4260
44-pin
40-pin
PD42S4260-70,
/iPD42S
VP15-207-2
MPD424260
424260-70 nec japan
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PD4264805G5-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S64805
uPD4264805
uPD42S65805
uPD4265805
64M-BIT
/iPD42S64805,
42S65805,
//PD42S64805,
42S65805
32-pin
PD4264805G5-A60-7JD
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NEC 8255
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT / MC-42S4000LAC32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S4000LAC32S series is a 4,194,304 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: ^PD42S17400LG3 (TSOP (II) are assembled.
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MC-42S4000LAC32S
32-BIT
uPD42S17400LG3
NEC 8255
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